NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 11 / 19
aaa-010862
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-2
-10
-1
-1
-10
V
CEsat
(V)
-10
-3
(1)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
aaa-010863
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-2
-10
-1
-1
-10
V
CEsat
(V)
-10
-3
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 17. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
aaa-010864
1
10
-1
10
2
10
10
3
R
CEsat
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 18. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
aaa-010865
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 19. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
