PartNumber | BSC018NE2LS | BSC018NE2LSI | BSC018NE2LSATMA1 |
Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 1.8 mOhms | 1.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 19 nC | 48 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | 69 W | - |
Configuration | Single | Single | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 140 S | 65 S | - |
Fall Time | 3.6 ns | 3.6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.4 ns | 4.8 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | 24 ns | - |
Typical Turn On Delay Time | 5.5 ns | 5.2 ns | - |
Part # Aliases | BSC018NE2LSATMA1 BSC18NE2LSXT SP000756336 | BSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030 | BSC018NE2LS BSC18NE2LSXT SP000756336 |
Unit Weight | 0.004176 oz | 0.004176 oz | - |
Channel Mode | - | Enhancement | - |