BSC018NE2LSIXT

BSC018NE2LSIXT
Mfr. #:
BSC018NE2LSIXT
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC018NE2LSIXT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC018NE2LSIXT more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
65 S
Fall Time:
3.6 ns
Product Type:
MOSFET
Rise Time:
4.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
5.2 ns
Part # Aliases:
BSC018NE2LSIATMA1 SP000906030
Tags
BSC018NE2LSI, BSC018NE2LS, BSC018NE, BSC018, BSC01, BSC0, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Part # Mfg. Description Stock Price
BSC018NE2LSIATMA1
DISTI # V72:2272_06384108
Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R
RoHS: Compliant
0
    BSC018NE2LSIATMA1
    DISTI # V36:1790_06384108
    Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R
    RoHS: Compliant
    0
    • 5000000:$0.3878
    • 2500000:$0.3882
    • 500000:$0.4323
    • 50000:$0.5174
    • 5000:$0.5320
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
    Min Qty: 1
    Container: Cut Tape (CT)
    4420In Stock
    • 1000:$0.6000
    • 500:$0.7600
    • 100:$0.9200
    • 10:$1.1800
    • 1:$1.3200
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
    Min Qty: 1
    Container: Digi-Reel®
    4420In Stock
    • 1000:$0.6000
    • 500:$0.7600
    • 100:$0.9200
    • 10:$1.1800
    • 1:$1.3200
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
    Min Qty: 5000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5000:$0.5320
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1
    Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 10000:$0.3368
    • 20000:$0.3368
    • 30000:$0.3368
    • 50000:$0.3368
    • 5000:$0.5333
    BSC018NE2LSIATMA1
    DISTI # SP000906030
    Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: SP000906030)
    Min Qty: 5000
    Europe - 0
    • 50000:€0.4129
    • 30000:€0.4270
    • 20000:€0.4410
    • 10000:€0.4551
    • 5000:€0.4692
    BSC018NE2LSIATMA1
    DISTI # 34AC1374
    Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes
    RoHS: Compliant
    1867
    • 1000:$0.6180
    • 500:$0.7820
    • 250:$0.8650
    • 100:$0.9470
    • 50:$1.0400
    • 25:$1.1300
    • 10:$1.2200
    • 1:$1.3600
    BSC018NE2LSI
    DISTI # 726-BSC018NE2LSI
    Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant
    38
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-84954
    • 25:$0.3164
    • 5:$0.3280
    • 1:$0.3600
    BSC018NE2LSIATMA1
    DISTI # 2781051
    Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
    RoHS: Compliant
    1867
    • 1000:$0.9710
    • 500:$1.2300
    • 100:$1.4900
    • 5:$1.9100
    BSC018NE2LSIATMA1
    DISTI # 2781051
    Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
    RoHS: Compliant
    1877
    • 5000:£0.4470
    • 1000:£0.5400
    • 500:£0.6840
    • 250:£0.7560
    • 100:£0.8280
    • 10:£1.0600
    • 1:£1.2000
    BSC018NE2LSIATMA1
    DISTI # 2781051RL
    Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
    RoHS: Compliant
    0
    • 5000:£0.4470
    • 1000:£0.5400
    • 500:£0.6840
    • 250:£0.7560
    • 100:£0.8280
    • 10:£1.0600
    • 1:£1.2000
    Image Part # Description
    BSC018N04LS G

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    OMO.#: OMO-BSC018N04LS-G

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    BSC018NE2LSI

    Mfr.#: BSC018NE2LSI

    OMO.#: OMO-BSC018NE2LSI

    MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC018NE2LSIXT

    Mfr.#: BSC018NE2LSIXT

    OMO.#: OMO-BSC018NE2LSIXT

    MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC018NE2LSATMA1

    Mfr.#: BSC018NE2LSATMA1

    OMO.#: OMO-BSC018NE2LSATMA1

    MOSFET LV POWER MOS
    BSC018N04LSGXT

    Mfr.#: BSC018N04LSGXT

    OMO.#: OMO-BSC018N04LSGXT-1190

    MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC018N04LSG

    Mfr.#: BSC018N04LSG

    OMO.#: OMO-BSC018N04LSG-1190

    30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET
    BSC018NE2LSI QFN8

    Mfr.#: BSC018NE2LSI QFN8

    OMO.#: OMO-BSC018NE2LSI-QFN8-1190

    New and Original
    BSC018N04LSGATMA1

    Mfr.#: BSC018N04LSGATMA1

    OMO.#: OMO-BSC018N04LSGATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 40V 100A TDSON-8
    BSC018NE2LSATMA1

    Mfr.#: BSC018NE2LSATMA1

    OMO.#: OMO-BSC018NE2LSATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 25V 100A TDSON-8
    BSC018NE2LS

    Mfr.#: BSC018NE2LS

    OMO.#: OMO-BSC018NE2LS-317

    RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of BSC018NE2LSIXT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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