 | | | |
| PartNumber | BSC018N04LS G | BSC018N04LSGXT | BSC018N04LSGATMA1 |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 1.5 mOhms | 1.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 90 S | 90 S | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7.4 ns | 7.4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 55 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | BSC018N04LSGATMA1 BSC18N4LSGXT SP000388293 | BSC018N04LS BSC018N04LSGATMA1 G SP000388293 | BSC018N04LS BSC18N4LSGXT G SP000388293 |
| Unit Weight | 0.004938 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC018NE2LS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | |
| BSC018N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LSI | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC018NE2LSIATMA1 | MOSFET N-CH 25V 29A TDSON-8 | ||
| BSC018NE2LSATMA1 | MOSFET N-CH 25V 100A TDSON-8 | ||
Infineon Technologies |
BSC018N04LSGATMA1 | MOSFET MV POWER MOS | |
| BSC018NE2LSATMA1 | MOSFET LV POWER MOS | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LS | New and Original | ||
| BSC018N04LSG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC018N04LSG-S | New and Original | ||
| BSC018N04LSGATMA1 , TDA3 | New and Original | ||
| BSC018NE2L | New and Original | ||
| BSC018NE2LSG | New and Original | ||
| BSC018NE2LSI | Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC018NE2LSI BSC018NE2LS | New and Original | ||
| BSC018NE2LSI QFN8 | New and Original | ||
| BSC018N04LS G | RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LS | RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |