BSC018N04LSGXT

Mfr. #:: BSC018N04LSGXT
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC018N04LSGXT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 150 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 90 S

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 7.4 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 55 ns

Typical Turn-On Delay Time:: 13 ns

Part # Aliases:: BSC018N04LS BSC018N04LSGATMA1 G SP000388293

Tags: BSC018N04LSG, BSC018N0, BSC018, BSC01, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC018N04LSGXT Description

*** Electronic Components: MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3

Market price

Part #	Mfg.	Description	Stock	Price
BSC018N04LSGATMA1 DISTI # V72:2272_06383456	Infineon Technologies AG	Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC018N04LSGATMA1 DISTI # V36:1790_06383456	Infineon Technologies AG	Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$0.4484 2500000:$0.4487 500000:$0.4750 50000:$0.5221 5000:$0.5300
BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 Min Qty: 1 Container: Cut Tape (CT)	7068In Stock	1000:$0.7223 500:$0.9149 100:$1.1075 10:$1.4210 1:$1.5900
BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 Min Qty: 1 Container: Digi-Reel®	7068In Stock	1000:$0.7223 500:$0.9149 100:$1.1075 10:$1.4210 1:$1.5900
BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$0.6218
BSC018N04LSGATMA1 DISTI # 35171897	Infineon Technologies AG	Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant	880	95:$0.6625
BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4749 30000:$0.4829 20000:$0.4999 10000:$0.5189 5000:$0.5379
BSC018N04LSGATMA1 DISTI # SP000388293	Infineon Technologies AG	Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP (Alt: SP000388293) Min Qty: 5000	Europe - 0	50000:€0.5722 30000:€0.6468 20000:€0.7049 10000:€0.7712 5000:€0.8293
BSC018N04LSGATMA1 DISTI # 60R2476	Infineon Technologies AG	MOSFET, N CH, 100A, 40V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes RoHS: Compliant	6311	10000:$0.5800 2500:$0.6000 1000:$0.7390 500:$0.8490 100:$0.9600 10:$1.2500 1:$1.4600
BSC018N04LS G DISTI # 726-BSC018N04LSG	Infineon Technologies AG	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	6021	1:$1.5300 10:$1.3000 100:$1.0000 500:$0.8890 1000:$0.7020
BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,100A,125W,PG-TDSON-8	445	1000:$1.2033 100:$1.2924 25:$1.3370 5:$1.4930 1:$1.6824
BSC018N04LSGATMA1 DISTI # 1775426	Infineon Technologies AG	MOSFET, N CH, 100A, 40V, PG-TDSON-8 RoHS: Compliant	5706	5000:£0.5550 1000:£0.6710 500:£0.8510 250:£0.9410 100:£1.0300 10:£1.3600 1:£1.6800

Related products

Image	Part #	Description
	Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT-1190	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC018N04LSG-S OMO.#: OMO-BSC018N04LSG-S-1190	New and Original
	Mfr.#: BSC018NE2L OMO.#: OMO-BSC018NE2L-1190	New and Original
	Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI-1190	Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC018NE2LSI BSC018NE2LS OMO.#: OMO-BSC018NE2LSI-BSC018NE2LS-1190	New and Original
	Mfr.#: BSC018NE2LSIATMA1 OMO.#: OMO-BSC018NE2LSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 29A TDSON-8
	Mfr.#: BSC018NE2LSATMA1 OMO.#: OMO-BSC018NE2LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 100A TDSON-8
	Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS-317	RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Availability

Stock:: Available
On Order:: 5000
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Current price of BSC018N04LSGXT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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BSC018N04LSGXT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes