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BSC018NE2LSI

BSC018NE2LSI
Mfr. #:
BSC018NE2LSI
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC018NE2LSI Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
65 S
Fall Time:
3.6 ns
Product Type:
MOSFET
Rise Time:
4.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
5.2 ns
Part # Aliases:
BSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030
Unit Weight:
0.004176 oz
Tags
BSC018NE2LSI, BSC018NE2LS, BSC018NE, BSC018, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***R
    M***R
    MA

    wihtout

    2019-04-21
    E**j
    E**j
    DE

    Excellent

    2019-04-08
    O***d
    O***d
    IL

    o.k

    2019-01-14
Part # Mfg. Description Stock Price
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5852
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSI		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.4609
    • 10000:$0.4439
    • 20000:$0.4279
    • 30000:$0.4129
    • 50000:$0.4059
    BSC018NE2LSIATMA1
    DISTI # 34AC1374    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes4867
    • 1:$1.5900
    • 10:$1.4100
    • 25:$1.3100
    • 50:$1.2100
    • 100:$1.1100
    • 250:$0.9860
    • 500:$0.8610
    • 1000:$0.6790
    BSC018NE2LSIInfineon Technologies AGPower Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		4415
    • 1000:$0.5300
    • 500:$0.5500
    • 100:$0.5800
    • 25:$0.6000
    • 1:$0.6500
    BSC018NE2LSI
    DISTI # 726-BSC018NE2LSI    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		987
    • 1:$1.3200
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    BSC018NE2LSIXT
    DISTI # 726-BSC018NE2LSIATMA    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		0
    • 5000:$0.5320
    BSC018NE2LSIInfineon Technologies AG 8481
      BSC018NE2LSIATMA1
      DISTI # BSC018NE2LSIATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-85048
      • 1:$0.3800
      • 5:$0.3440
      • 25:$0.3332
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4877
      • 5:£1.1700
      • 25:£1.0600
      • 100:£0.8410
      • 250:£0.7470
      • 500:£0.6520
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4867
      • 5:$1.7000
      • 25:$1.4800
      • 100:$1.2100
      • 250:$1.0200
      • 500:$0.8810
      • 1000:$0.8330
      • 5000:$0.7900
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      Availability
      Stock:
      38
      On Order:
      2021
      Enter Quantity:
      Current price of BSC018NE2LSI is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.31
      $1.31
      10
      $1.12
      $11.20
      100
      $0.86
      $86.10
      500
      $0.76
      $380.50
      1000
      $0.60
      $600.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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