BSC018NE2L

BSC018NE2LS vs BSC018NE2LSI vs BSC018NE2LSATMA1

 
PartNumberBSC018NE2LSBSC018NE2LSIBSC018NE2LSATMA1
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V25 V
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.8 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19 nC48 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min140 S65 S-
Fall Time3.6 ns3.6 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.4 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns24 ns-
Typical Turn On Delay Time5.5 ns5.2 ns-
Part # AliasesBSC018NE2LSATMA1 BSC18NE2LSXT SP000756336BSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030BSC018NE2LS BSC18NE2LSXT SP000756336
Unit Weight0.004176 oz0.004176 oz-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC018NE2LS MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSI MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSIATMA1 MOSFET N-CH 25V 29A TDSON-8
BSC018NE2LSATMA1 MOSFET N-CH 25V 100A TDSON-8
Infineon Technologies
Infineon Technologies
BSC018NE2LSATMA1 MOSFET LV POWER MOS
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2L New and Original
BSC018NE2LSG New and Original
BSC018NE2LSI Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC018NE2LSI BSC018NE2LS New and Original
BSC018NE2LSI QFN8 New and Original
BSC018NE2LS RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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