 |  | | |
| PartNumber | BSZ100N06LS3 G | BSZ100N06L | BSZ100N06LS3 |
| Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 7.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | Single Quad Drain Triple Source |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 58 ns | - | 58 ns |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | 19 ns |
| Typical Turn On Delay Time | 8 ns | - | 8 ns |
| Part # Aliases | BSZ100N06LS3GATMA1 BSZ1N6LS3GXT SP000453672 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | - | BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672 |
| Package Case | - | - | 8-PowerVDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TSDSON-8 (3.3x3.3) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 50W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 3500pF @ 30V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 11A (Ta), 20A (Tc) |
| Rds On Max Id Vgs | - | - | 10 mOhm @ 20A, 10V |
| Vgs th Max Id | - | - | 2.2V @ 23μA |
| Gate Charge Qg Vgs | - | - | 45nC @ 10V |
| Pd Power Dissipation | - | - | 2.1 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 20 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 10 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ100N06LS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ100N06LS3GATMA1 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| BSZ100N06LS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
| BSZ100N06L | New and Original | ||
| BSZ100N06LS3 | New and Original | ||
| BSZ100N06LS3 G | BSZ100N06LS3 G | ||
| BSZ100N06LS3G | New and Original | ||
| BSZ100N06LS3GATMA | New and Original |