PartNumber | CG2H30070F | CG2H40010F | CG2H30070F-TB2 |
Description | RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt | RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt | RF JFET Transistors Test Board without GaN HEMT |
Manufacturer | Qorvo | Cree, Inc. | Cree, Inc. |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | N |
Transistor Type | HEMT | HEMT | HEMT |
Technology | GaN SiC | GaN | GaN |
Gain | 22.9 dB | 16.5 dB | 12 dB |
Id Continuous Drain Current | 28 A | 1.5 A | 12 A |
Output Power | 1.5 kW | 10 W | 85 W |
Maximum Drain Gate Voltage | 225 V | - | 28 V |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 150 C | + 150 C |
Pd Power Dissipation | 758 W | - | - |
Mounting Style | SMD/SMT | Screw Mount | Screw Mount |
Package / Case | NI-1230-4 | 440166 | CG2H30070F |
Packaging | Tray | Tray | Bulk |
Application | Avionics, IFF Transponders | - | - |
Configuration | Dual Gate Dual Drain | - | Single |
Operating Frequency | 1 GHz to 1.1 GHz | DC to 6 GHz | 0.5 GHz to 3 GHz |
Series | QPD | - | - |
Brand | Qorvo | Wolfspeed / Cree | Wolfspeed / Cree |
Development Kit | QPD1025LEVB1 | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 18 | 250 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
Vgs Gate Source Breakdown Voltage | - | - 10 V, 2 V | - 10 V, 2 V |
Forward Transconductance Min | - | - | - |
Vgs th Gate Source Threshold Voltage | - | - 2.7 V | - 2.8 V |