 |  |  | |
| PartNumber | CGHV59070F | CGHV50200F-AMP | CGHV59070F-AMP |
| Description | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | RF Development Tools Test Board with GaN HEMT | EVAL BOARD WITH CGHV59070F |
| Manufacturer | Qorvo | Cree, Inc. | - |
| Product Category | RF JFET Transistors | RF Development Tools | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN SiC | - | - |
| Gain | 19 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 28 V | - | - |
| Vgs Gate Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 817 mA | - | - |
| Output Power | 24 W | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 150 C | - |
| Pd Power Dissipation | 28.8 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | QFN-8 | - | - |
| Packaging | Tray | Bulk | - |
| Configuration | Single | - | - |
| Operating Frequency | 30 MHz to 1.215 GHz | - | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | - | - |
| Brand | Qorvo | Wolfspeed / Cree | - |
| Development Kit | QPD1000PCB401, QPD1000PCB402 | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | RF Development Tools | - |
| Factory Pack Quantity | 100 | 2 | - |
| Subcategory | Transistors | Development Tools | - |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| Part # Aliases | 1131140 | - | - |
| Shipping Restrictions | - | - | |
| Product | - | Evaluation Boards | - |
| Type | - | RF Transistors | - |
| Tool Is For Evaluation Of | - | CGHV50200F | - |
| Frequency | - | 4.4 GHz to 5 GHz | - |
| Operating Supply Voltage | - | 40 V | - |
| Description/Function | - | Evaluation board for CGHV50200F | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CGHV59070F | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | |
| CGHV96100F2 | RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt | ||
| CGHV60040D | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt | ||
| CGHV59350F | RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt | ||
| CGHV60075D5 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt | ||
| CGHV96050F1 | RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt | ||
| CGHV60170D | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt | ||
| CGHV96050F2 | RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt | ||
| CGHV96050F1-TB | RF Development Tools Test Board without GaN HEMT | ||
| CGHV96100F2-TB | RF Development Tools Test Board without GaN HEMT | ||
| CGHV59070F | RF MOSFET HEMT 50V 440224 | ||
| CGHV59070F-TB | TEST FIXTURE FOR CGHV59070F | ||
| CGHV59350F-TB | TEST FIXTURE FOR CGHV59350F | ||
| CGHV96050F1-TB | BOARD TEST FIXTURE FOR CGHV96050 | ||
| CGHV96050F2-TB | TEST FIXTURE FOR CGHV96050F2 | ||
| CGHV96100F2-TB | TEST FIXTURE FOR CGHV96100F2 | ||
| CGHV50200F-AMP | EVAL BOARD FOR CGHV50200 | ||
| CGHV59070F-AMP | EVAL BOARD WITH CGHV59070F | ||
| CGHV60040D-GP4 | RF MOSFET HEMT 50V DIE | ||
| CGHV60075D5-GP4 | RF POWER TRANSISTOR | ||
| CGHV60170D-GP4 | RF MOSFET HEMT 50V DIE | ||
| CGHV96100F2 | RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM | ||
| CGHV59350F | RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN | ||
| CGHV96050F2 | RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ. | ||
| CGHV60040D | RF JFET Transistors DC-6GHz 40W GaN 50Volt | ||
| CGHV60170D | RF JFET Transistors DC-6GHz 170W GaN 50Volt | ||
| CGHV96050F1 | RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT | ||
| CGHV60075D5 | RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V | ||
| CGHV60075D | RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V |