 |  | | |
| PartNumber | IPB083N10N3 G | IPB083N10N3G | IPB083N10N3 |
| Description | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 7.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | XPB083N10 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | - | 42 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31 ns | - | 31 ns |
| Typical Turn On Delay Time | 18 ns | - | 18 ns |
| Part # Aliases | IPB083N10N3GATMA1 IPB83N1N3GXT SP000458812 | - | - |
| Unit Weight | 0.068654 oz | 0.068654 oz | 0.068654 oz |
| Part Aliases | - | G IPB083N10N3 IPB083N10N3GXT SP000458812 | IPB083N10N3GATMA1 IPB083N10N3GXT SP000458812 |
| Package Case | - | TO-263-3 | TO-263-3 |
| Pd Power Dissipation | - | - | 125 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 8.2 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | |
| IPB083N10N3GATMA1 | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
| IPB083N10N3GATMA1 | MOSFET N-CH 100V 80A TO263-3 | ||
| IPB083N10N3G | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 | ||
| IPB083N10N3G. | New and Original | ||
| IPB083N10N3 | New and Original | ||
| IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
| IPB083N10N3G , 2SD1936T | New and Original | ||
| IPB083N10N3GATMA1 , 2SD1 | New and Original |