 |  | | |
| PartNumber | IPD65R380E6ATMA1 | IPD65R380E6 | IPD65R380E6 , 2SD2402-EY |
| Description | MOSFET LOW POWER_LEGACY | Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 10.6 A | - | - |
| Rds On Drain Source Resistance | 340 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 39 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS E6 | CoolMOS E6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | 7 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 57 ns | 57 nS | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPD65R380E6 SP001117736 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPD65R380E6BTMA1 IPD65R380E6XT SP000795278 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 83 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 10.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 700 V | - |
| Rds On Drain Source Resistance | - | 380 mOhms | - |
| Qg Gate Charge | - | 39 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R380E6ATMA1 | MOSFET LOW POWER_LEGACY | |
| IPD65R380E6BTMA1 | MOSFET N-CH 650V 10.6A TO252 | ||
| IPD65R380E6ATMA1 | MOSFET N-CH 650V 10.6A TO252 | ||
| IPD65R380E6 | Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252 | ||
| IPD65R380E6 , 2SD2402-EY | New and Original |