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| PartNumber | IPD65R600C6 | IPD65R600C6BTMA1 | IPD65R600C6ATMA1 |
| Description | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | LOW POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 7.3 A | 7.3 A | - |
| Rds On Drain Source Resistance | 540 mOhms | 540 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 63 W | 63 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C6 | XPD65R600 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 13 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 80 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | IPD65R600C6BTMA1 IPD65R6C6XT SP000745020 | IPD65R600C6 IPD65R6C6XT SP000745020 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | - | 0.3504 IPD65R600C6 |
| Package Case | - | - | TO-252-3 |