PartNumber | IPW60R099C6 | IPW60R099C7XKSA1 | IPW60R099C6FKSA1 |
Description | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 37.9 A | 22 A | 37.9 A |
Rds On Drain Source Resistance | 90 mOhms | 85 mOhms | 90 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 119 nC | 42 nC | 119 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 278 W | 110 W | 278 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 21.1 mm | 21.1 mm |
Length | 16.13 mm | 16.13 mm | 16.13 mm |
Series | CoolMOS C6 | CoolMOS C7 | CoolMOS C6 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.21 mm | 5.21 mm | 5.21 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6 ns | 4.5 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 8 ns | 12 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 75 ns | 54 ns | 75 ns |
Typical Turn On Delay Time | 15 ns | 11.8 ns | 15 ns |
Part # Aliases | IPW60R099C6FKSA1 IPW6R99C6XK SP000641908 | IPW60R099C7 SP001298004 | IPW60R099C6 IPW6R99C6XK SP000641908 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |