IPW60R099C7XKSA1

Mfr. #:: IPW60R099C7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPW60R099C7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPW60R099C7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 22 A

Rds On - Drain-Source Resistance:: 85 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 42 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 110 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 21.1 mm

Length:: 16.13 mm

Series:: CoolMOS C7

Transistor Type:: 1 N-Channel

Width:: 5.21 mm

Brand:: Infineon Technologies

Fall Time:: 4.5 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 240

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 54 ns

Typical Turn-On Delay Time:: 11.8 ns

Part # Aliases:: IPW60R099C7 SP001298004

Unit Weight:: 1.340411 oz

Tags: IPW60R099C7, IPW60R099C, IPW60R099, IPW60R09, IPW60R0, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R099C7XKSA1 Ratings and Reviews

D***y

Very long went, so 4 stars.

2019-06-30

E**g

Looks normal. They threw it in the mailbox when the time came out.

2019-05-19

IPW60R099C7XKSA1 Description

***ure Electronics: Single N-Channel 600 V 99 mOhm 42 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 22A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-247

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***icroelectronics: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ark: MOSFET, N CH, 600V, 17A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; On Resistance Rds(on):0.168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

***ark: MOSFET Transistor, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N CH, 600V, 17A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 140W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247

***r Electronics: Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N CH, 600V, 16A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

*** Source Electronics: MOSFET N-CH 600V 16A TO-247 / Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-247 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, 600V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; Current Id Max:16A; Package / Case:TO-247; Power Dissipation Pd:139W; Power Dissipation Pd:139W; Pulse Current Idm:51A; Termination Type:SMD; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

IPW60R099C7XKSA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPW60R099C7XKSA1 DISTI # V99:2348_06377341	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	2500:$2.9630 1000:$3.0150 500:$3.5690 250:$3.9740 100:$4.1810 10:$4.8220 1:$6.2215
IPW60R099C7XKSA1 DISTI # V36:1790_06377341	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	160	2500:$2.8660 1000:$3.0150 500:$3.5690 250:$3.9740 100:$4.1810 10:$4.8220 1:$6.2215
IPW60R099C7XKSA1 DISTI # IPW60R099C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 22A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	1In Stock	2640:$3.0044 720:$3.7499 240:$4.4050 25:$5.0828 10:$5.3760 1:$5.9900
IPW60R099C7XKSA1 DISTI # 32899436	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	3:$6.2215
IPW60R099C7XKSA1 DISTI # 32897404	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	160	3:$6.2215
IPW60R099C7XKSA1 DISTI # IPW60R099C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R099C7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.6900 2400:$2.6900 960:$2.7900 480:$2.8900 240:$3.0900
IPW60R099C7XKSA1 DISTI # SP001298004	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001298004) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.2900 500:€2.4900 100:€2.5900 50:€2.6900 25:€2.7900 10:€2.8900 1:€3.1900
IPW60R099C7XKSA1 DISTI # 13AC9096	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	220	500:$3.9900 250:$4.4000 100:$4.6000 50:$4.8200 25:$5.0200 10:$5.2400 1:$6.0700
IPW60R099C7XKSA1 DISTI # 726-IPW60R099C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$5.6900 10:$4.8400 100:$4.1900 250:$3.9800 500:$3.5700
IPW60R099C7XKSA1 DISTI # IPW60R099C7	Infineon Technologies AG	N-Ch 600V 22A 110W 0,099R TO247 RoHS: Compliant	0	1:€7.0300 10:€4.0300 50:€2.5300 100:€2.4100
IPW60R099C7XKSA1 DISTI # 2726077	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-247-3 RoHS: Compliant	220	25:$7.6600 10:$8.1100 1:$9.0300
IPW60R099C7XKSA1 DISTI # 2726077	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-247-3	244	100:£3.8000 10:£4.4000 1:£5.7000

Image	Part #	Description
	Mfr.#: IPB60R120P7ATMA1 OMO.#: OMO-IPB60R120P7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R080P7ATMA1 OMO.#: OMO-IPB60R080P7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R080P7ATMA1 OMO.#: OMO-IPB60R080P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R120P7ATMA1 OMO.#: OMO-IPB60R120P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3

IPW60R099C7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

D***y

E**g

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes