NSS1C201MZ4

NSS1C201MZ4T3G vs NSS1C201MZ4T1G vs NSS1C201MZ4T1G-CUT TAPE

 
PartNumberNSS1C201MZ4T3GNSS1C201MZ4T1GNSS1C201MZ4T1G-CUT TAPE
DescriptionBipolar Transistors - BJT 100V LO VCE(SAT) TRA NPNBipolar Transistors - BJT 100V, NPN Low VCE Trans.
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V100 V-
Collector Base Voltage VCBO140 V140 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage180 mV180 mV-
Maximum DC Collector Current3 A2 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNSS1C201MZ4NSS1C201MZ4-
DC Current Gain hFE Max150150-
Height1.57 mm1.57 mm-
Length6.5 mm6.5 mm-
PackagingReelReel-
Width3.5 mm3.5 mm-
BrandON SemiconductorON Semiconductor-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation2000 mW2000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity40001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Manufacturer Part # Description RFQ
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
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