PartNumber | RN1109(T5L,F,T) | RN1108MFV(TPL3) | RN1107MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 47Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | N | N |
Configuration | Single | Single | Single |
Transistor Polarity | NPN | NPN | NPN |
Typical Input Resistor | 47 kOhms | 22 kOhms | 10 kOhms |
Typical Resistor Ratio | 2.14 | 0.468 | 0.213 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-416-3 | - | - |
DC Collector/Base Gain hfe Min | 70 | 80 | 80 |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Continuous Collector Current | 100 mA | 100 mA | 100 mA |
Pd Power Dissipation | 100 mW | 150 mW | 150 mW |
Series | RN1109 | RN1108 | RN1107 |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | 15 V | - | - |
Brand | Toshiba | Toshiba | Toshiba |
Maximum DC Collector Current | 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000212 oz | - | - |
Peak DC Collector Current | - | 100 mA | 100 mA |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 80 | 80 |