RN2110MFV(T

RN2110MFV(TPL3) vs RN2110MFV(TL3SONY)

 
PartNumberRN2110MFV(TPL3)RN2110MFV(TL3SONY)
DescriptionBipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms
ManufacturerToshiba-
Product CategoryBipolar Transistors - Pre-Biased-
RoHSN-
ConfigurationSingle-
Transistor PolarityPNP-
Typical Input Resistor4.7 kOhms-
Mounting StyleSMD/SMT-
Package / CaseSOT-723-
DC Collector/Base Gain hfe Min400-
Collector Emitter Voltage VCEO Max50 V-
Continuous Collector Current- 100 mA-
Peak DC Collector Current100 mA-
Pd Power Dissipation150 mW-
Maximum Operating Temperature+ 150 C-
SeriesRN2110-
PackagingReel-
DC Current Gain hFE Max120-
Height0.5 mm-
Length1.2 mm-
Width0.8 mm-
BrandToshiba-
Product TypeBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity8000-
SubcategoryTransistors-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2110MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms
RN2110MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms
RN2110MFV(TL3SONY) New and Original
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