PartNumber | SI2301CDS-T1-E3 | SI2301BDS-T1-GE3 | SI2301BDS-T1-E3 |
Description | MOSFET -20V Vds 8V Vgs SOT-23 | MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V | MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 3.1 A | 2.2 A | 2.4 A |
Rds On Drain Source Resistance | 112 mOhms | 100 mOhms | 100 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 450 mV | 450 mV |
Vgs Gate Source Voltage | 4.5 V | 4.5 V | 4.5 V |
Qg Gate Charge | 10 nC | 4.5 nC | 10 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.6 W | 0.7 W | 900 mW |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI2 | SI2 | SI2 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 9.5 S | 6.5 S | 6.5 S |
Fall Time | 10 ns | 20 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 40 ns | 40 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
Typical Turn On Delay Time | 11 ns | 20 ns | 20 ns |
Part # Aliases | SI2301CDS-E3 | SI2301BDS-GE3 | SI2301BDS-E3 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
Height | - | 1.45 mm | 1.45 mm |
Length | - | 2.9 mm | 2.9 mm |
Width | - | 1.6 mm | 1.6 mm |