PartNumber | SI2307BDS-T1-E3 | SI2306BDS-T1-E3 | SI2306BDS-T1-GE3 |
Description | MOSFET 30V 3.2A 1.25W | MOSFET 30V 4.0A 0.75W | MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 2.5 A | 3.16 A | - |
Rds On Drain Source Resistance | 78 mOhms | 47 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 9 nC | 3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 0.75 W | 0.75 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.45 mm | 1.45 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | SI2 | SI2 | SI2 |
Transistor Type | 1 P-Channel | 1 N-Channel | - |
Width | 1.6 mm | 1.6 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 5 S | 7 S | - |
Fall Time | 14 ns | 6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 12 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 14 ns | - |
Typical Turn On Delay Time | 9 ns | 7 ns | - |
Part # Aliases | SI2307BDS-E3 | SI2306BDS-E3 | SI2306BDS-GE3 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |