PartNumber | SI3417DV-T1-GE3 | SI3424BDV-T1-E3 | SI3421DV-T1-GE3 |
Description | MOSFET -30V Vds 20V Vgs TSOP-6 | MOSFET RECOMMENDED ALT 78-SI3424CDV-T1-GE3 | MOSFET -30V Vds 20V Vgs TSOP-6 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.05 mm | 3.05 mm | - |
Series | SI3 | SI3 | SI3 |
Width | 1.65 mm | 1.65 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
Part # Aliases | - | SI3424BDV-E3 | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | P-Channel |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 8 A |
Rds On Drain Source Resistance | - | - | 19.2 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Vgs Gate Source Voltage | - | - | 10 V |
Qg Gate Charge | - | - | 46 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 4.2 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 P-Channel |
Forward Transconductance Min | - | - | 30 S |
Fall Time | - | - | 13 ns |
Rise Time | - | - | 9 ns |
Typical Turn Off Delay Time | - | - | 55 ns |
Typical Turn On Delay Time | - | - | 7 ns |