PartNumber | SI7900AEDN-T1-E3 | SI7900AEDN-T1-E3 GE3 |
Description | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | |
Manufacturer | Vishay | - |
Product Category | MOSFET | - |
RoHS | E | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | PowerPAK-1212-8 | - |
Number of Channels | 2 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - |
Id Continuous Drain Current | 8.5 A | - |
Rds On Drain Source Resistance | 26 mOhms | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - |
Vgs Gate Source Voltage | 12 V | - |
Qg Gate Charge | 16 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 3.1 W | - |
Configuration | Dual | - |
Channel Mode | Enhancement | - |
Tradename | TrenchFET | - |
Packaging | Reel | - |
Series | SI7 | - |
Transistor Type | 2 N-Channel | - |
Brand | Vishay / Siliconix | - |
Forward Transconductance Min | 25 S | - |
Fall Time | 4.2 ns | - |
Product Type | MOSFET | - |
Rise Time | 1.3 ns | - |
Factory Pack Quantity | 3000 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 8.6 ns | - |
Typical Turn On Delay Time | 0.85 ns | - |
Part # Aliases | SI7900AEDN-T1 | - |