PartNumber | SISA12ADN-T1-GE3 | SISA14DN-T1-GE3 | SISA10DN-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 25 A | 20 A | 30 A |
Rds On Drain Source Resistance | 3.2 mOhms | 4.25 mOhms | 2.8 mOhms |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | 1.1 V |
Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V | 20 V, - 16 V |
Qg Gate Charge | 45 nC | 29 nC | 51 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 28 W | 26.5 W | 39 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIS | SIS | SIS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 51 S | 65 S | 52 S |
Fall Time | 10 ns | 8 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 8 ns | 10 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 18 ns | 27 ns |
Typical Turn On Delay Time | 10 ns | 9 ns | 10 ns |
Height | - | - | 1.04 mm |
Length | - | - | 3.3 mm |
Width | - | - | 3.3 mm |
Part # Aliases | - | - | SISA10DN-GE3 |