PartNumber | VN2210N3-G | VN2210N3-G P002 | VN2210N3-G P003 |
Description | MOSFET 100V 0.35Ohm | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
Manufacturer | Microchip | Microchip Technology | Microchip Technology |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 1.2 A | - | - |
Rds On Drain Source Resistance | 4 Ohms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Reel | Reel |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FET | - | - |
Width | 4.19 mm | - | - |
Brand | Microchip Technology | - | - |
Fall Time | 30 ns | 30 ns | 30 ns |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | 10 ns | 10 ns |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 50 ns | 50 ns | 50 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Unit Weight | 0.015873 oz | 0.016000 oz | 0.016000 oz |
Package Case | - | TO-92-3 | TO-92-3 |
Pd Power Dissipation | - | 1 W | 1 W |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 1.2 A | 1.2 A |
Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
Rds On Drain Source Resistance | - | 500 mOhms | 500 mOhms |