STP10N105K5

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.05 kV

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

1.3 Ohms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

21.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

130 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

MDmesh

Packaging:

Tube

Series:

STP10N105K5

Brand:

STMicroelectronics

Fall Time:

21.5 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

19 ns

Unit Weight:

0.011640 oz

Tags

STP10N, STP10, STP1, STP