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SIHD9N60E-GE3

SIHD9N60E-GE3
Mfr. #:
SIHD9N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD9N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD9N60E-GE3 DatasheetSIHD9N60E-GE3 Datasheet (P4-P6)SIHD9N60E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHD9N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
320 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
26 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.011993 oz
Tags
SIHD, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 9A 3-Pin DPAK
***ment14 APAC
MOSFET, N-CH, 9A, 600V, TO-252
***ark
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.32Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3-ND		Vishay SiliconixMOSFET N-CHANNEL 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2990In Stock
  • 6000:$0.8586
  • 3000:$0.8916
  • 500:$1.1558
  • 100:$1.4068
  • 25:$1.6512
  • 10:$1.7500
  • 1:$1.9500
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK - Tape and Reel (Alt: SIHD9N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8059
  • 18000:$0.8279
  • 12000:$0.8519
  • 6000:$0.8879
  • 3000:$0.9149
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK (Alt: SIHD9N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8399
  • 500:€0.8629
  • 100:€0.8749
  • 50:€0.8889
  • 25:€1.0009
  • 10:€1.2139
  • 1:€1.7319
SIHD9N60E-GE3
DISTI # 78-SIHD9N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3021
  • 1:$1.9500
  • 10:$1.6200
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 3000:$0.8490
  • 6000:$0.8170
  • 9000:$0.7860
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-252
RoHS: Compliant		2913
  • 1000:$1.5400
  • 500:$1.8600
  • 100:$2.3900
  • 10:$2.9700
  • 1:$3.2800
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-2522927
  • 500:£0.8050
  • 250:£0.8590
  • 100:£0.9130
  • 10:£1.1800
  • 1:£1.4200
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of SIHD9N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.95
$1.95
10
$1.62
$16.20
100
$1.25
$125.00
500
$1.10
$550.00
1000
$0.91
$911.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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