SIRA90DP-T1-GE3

Mfr. #:: SIRA90DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 100A Id Qg 48nC Typ.
Lifecycle:: New from this manufacturer.
Datasheet:: SIRA90DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIRA90DP-T1-GE3 Datasheet SIRA90DP-T1-GE3 Datasheet (P4-P6)SIRA90DP-T1-GE3 Datasheet (P7-P9)SIRA90DP-T1-GE3 Datasheet (P10-P12)SIRA90DP-T1-GE3 Datasheet (P13)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 650 uOhms

Vgs th - Gate-Source Threshold Voltage:: 800 mV

Vgs - Gate-Source Voltage:: 20 V, - 16 V

Qg - Gate Charge:: 153 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 104 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIR

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 110 S

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 16 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 46 ns

Typical Turn-On Delay Time:: 15 ns

Unit Weight:: 0.002610 oz

Tags: SIRA9, SIRA, SIR

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRA90DP-T1-GE3 Description

***et Europe: MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 30V 100A POWERPAKSO

***ark: MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

***nell: MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):650µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

Market price

Part #	Mfg.	Description	Stock	Price
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 100A POWERPAKSO RoHS: Compliant Min Qty: 6000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$0.5264
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA90DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.4819 30000:$0.4949 18000:$0.5089 12000:$0.5309 6000:$0.5469
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA90DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.5249 500:€0.5319 100:€0.5409 50:€0.5489 25:€0.6209 10:€0.7659 1:€1.0679
SIRA90DP-T1-GE3 DISTI # 20AC3876	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET	0	10000:$0.4780 6000:$0.4890 4000:$0.5080 2000:$0.5640 1000:$0.6210 1:$0.6470
SIRA90DP-T1-GE3 DISTI # 15AC8636	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):650µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	0	500:$0.7220 250:$0.7810 100:$0.8390 50:$0.9270 25:$1.0100 10:$1.1000 1:$1.3300
SIRA90DP-T1-GE3 DISTI # 78-SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 100A Id Qg 48nC Typ. RoHS: Compliant	967	1:$1.3100 10:$1.0800 100:$0.8310 500:$0.7150 1000:$0.5640
SIRA90DP-T1-GE3 DISTI # 2749593	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO	0	500:£0.5610 250:£0.6070 100:£0.6530 25:£0.8490 5:£0.9410
SIRA90DP-T1-GE3 DISTI # 2749593	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO RoHS: Compliant	0	1000:$0.8850 500:$0.9380 250:$1.1100 100:$1.3400 10:$1.7200 1:$2.0700

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Availability

Stock:: Available
On Order:: 1989
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SIRA90DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes