SISS67DN-T1-GE3

SISS67DN-T1-GE3
Mfr. #:
SISS67DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
Lifecycle:
New from this manufacturer.
Datasheet:
SISS67DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS67DN-T1-GE3 DatasheetSISS67DN-T1-GE3 Datasheet (P4-P6)SISS67DN-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SISS67DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8S-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
4.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
74 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
65.8 W
Configuration:
Single
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIS
Brand:
Vishay / Siliconix
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
20 ns
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Part # Mfg. Description Stock Price
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8958In Stock
  • 1000:$0.5147
  • 500:$0.6520
  • 100:$0.7893
  • 10:$1.0120
  • 1:$1.1300
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8958In Stock
  • 1000:$0.5147
  • 500:$0.6520
  • 100:$0.7893
  • 10:$1.0120
  • 1:$1.1300
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.4264
  • 6000:$0.4431
  • 3000:$0.4664
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS67DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4059
  • 30000:$0.4179
  • 18000:$0.4289
  • 12000:$0.4479
  • 6000:$0.4609
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 (Alt: SISS67DN-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.4429
  • 500:€0.4489
  • 100:€0.4569
  • 50:€0.4629
  • 25:€0.5239
  • 10:€0.6459
  • 1:€0.9009
SISS67DN-T1-GE3
DISTI # 81AC3506
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4030
  • 6000:$0.4130
  • 4000:$0.4290
  • 2000:$0.4760
  • 1000:$0.5240
  • 1:$0.5460
SISS67DN-T1-GE3
DISTI # 78AC6533
Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes6000
  • 500:$0.6090
  • 250:$0.6590
  • 100:$0.7090
  • 50:$0.7800
  • 25:$0.8520
  • 10:$0.9230
  • 1:$1.1200
SISS67DN-T1-GE3
DISTI # 78-SISS67DN-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
RoHS: Compliant
5177
  • 1:$1.1100
  • 10:$0.9140
  • 100:$0.7020
  • 500:$0.6030
  • 1000:$0.4760
  • 3000:$0.4450
SISS67DN-T1-GE3
DISTI # 2932963
Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C
RoHS: Compliant
6000
  • 1000:$0.7390
  • 500:$0.7810
  • 250:$0.9180
  • 100:$1.1200
  • 10:$1.4300
  • 1:$1.7200
SISS67DN-T1-GE3
DISTI # 2932963
Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C6000
  • 500:£0.4370
  • 250:£0.4730
  • 100:£0.5090
  • 10:£0.7150
  • 1:£0.9190
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of SISS67DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.11
$1.11
10
$0.91
$9.14
100
$0.70
$70.20
500
$0.60
$301.50
1000
$0.48
$476.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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