SISS26DN-T1-GE3

SISS26DN-T1-GE3
Mfr. #:
SISS26DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
Lifecycle:
New from this manufacturer.
Datasheet:
SISS26DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS26DN-T1-GE3 DatasheetSISS26DN-T1-GE3 Datasheet (P4-P6)SISS26DN-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SISS26DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8S-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
6.7 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
57 W
Configuration:
Single
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIS
Brand:
Vishay / Siliconix
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
10 ns
Tags
SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK 1212-S T/R
***mal
N-Channel 60 V (D-S) MOSFET
***ark
Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISS26DN-T1-GE3
DISTI # V72:2272_22521042
Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    SISS26DN-T1-GE3
    DISTI # V36:1790_22521042
    Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    • 6000000:$0.6627
    • 3000000:$0.6628
    • 600000:$0.6694
    • 60000:$0.6789
    • 6000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Cut Tape (CT)
    13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Digi-Reel®
    13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 3000
    Container: Tape & Reel (TR)
    12000In Stock
    • 6000:$0.6464
    • 3000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS26DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.6229
    • 18000:$0.6399
    • 12000:$0.6579
    • 6000:$0.6859
    • 3000:$0.7069
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3)
    Min Qty: 1
    Europe - 0
      SISS26DN-T1-GE3
      DISTI # 59AC7455
      Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET
      RoHS: Not Compliant
      0
      • 10000:$0.6180
      • 6000:$0.6320
      • 4000:$0.6570
      • 2000:$0.7290
      • 1000:$0.8020
      • 1:$0.8360
      SISS26DN-T1-GE3
      DISTI # 37AC0920
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes
      RoHS: Compliant
      1920
      • 500:$0.9230
      • 250:$0.9970
      • 100:$1.0700
      • 50:$1.1800
      • 25:$1.2800
      • 10:$1.3900
      • 1:$1.6900
      SISS26DN-T1-GE3
      DISTI # 78-SISS26DN-T1-GE3
      Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
      RoHS: Compliant
      14562
      • 1:$1.5500
      • 10:$1.3900
      • 100:$1.0900
      • 500:$0.9230
      • 1000:$0.7430
      • 3000:$0.6800
      • 6000:$0.6460
      • 9000:$0.6220
      SISS26DN-T1-GE3
      DISTI # 2785453RL
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      0
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      3176
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      1930
      • 500:$1.3800
      • 100:$1.6800
      • 10:$2.0900
      • 1:$2.3200
      SISS26DN-T1-GE3Vishay IntertechnologiesMOSFET N-CHANNEL 60V 60A 1212-8S6015
      • 1:¥34.1981
      • 100:¥17.5094
      • 1500:¥10.7158
      • 3000:¥8.1011
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      Mfr.#: LM5009SDC/NOPB

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      Voltage Regulators - Switching Regulators 150 MA 100V STEP-DWN SWITCHING REG
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      Mfr.#: ERJ-2RKF1210X

      OMO.#: OMO-ERJ-2RKF1210X-PANASONIC

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      Availability
      Stock:
      14
      On Order:
      1997
      Enter Quantity:
      Current price of SISS26DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.69
      $1.69
      10
      $1.39
      $13.90
      100
      $1.07
      $107.00
      500
      $0.92
      $461.50
      1000
      $0.73
      $728.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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