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IPB65R190CFDAATMA1

IPB65R190CFDAATMA1
Mfr. #:
IPB65R190CFDAATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 57.2A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB65R190CFDAATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB65R190CFDAATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
17.5 A
Rds On - Drain-Source Resistance:
171 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
68 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
151 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
6.4 ns
Product Type:
MOSFET
Rise Time:
8.4 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
53.2 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
IPB65R190CFDA IPB65R19CFDAXT SP000928264
Unit Weight:
0.068654 oz
Tags
IPB65R190CFDA, IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 190 mOhm 68 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
MOS Power Transistors HV (>= 200V)
***ronik
N-CH 650V 18A 190mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.1215
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.8900
  • 2000:$1.8900
  • 4000:$1.7900
  • 6000:$1.6900
  • 10000:$1.6900
IPB65R190CFDAATMA1
DISTI # SP000928264		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928264)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€2.3900
  • 2000:€1.8900
  • 4000:€1.6900
  • 6000:€1.6900
  • 10000:€1.4900
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDA		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPB65R190CFDA)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IPB65R190CFDAATMA1
    DISTI # 726-IPB65R190CFDAATM    		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant    		0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
    IPB65R190CFDA
    DISTI # 726-IPB65R190CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant    		0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IPB65R190CFDAATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.64
    $3.64
    10
    $3.10
    $31.00
    100
    $2.68
    $268.00
    250
    $2.54
    $635.00
    500
    $2.28
    $1 140.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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