STP11NM80

Mfr. #:: STP11NM80
Manufacturer:: STMicroelectronics
Description:: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
Lifecycle:: New from this manufacturer.
Datasheet:: STP11NM80 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: STP11NM80 more Information STP11NM80 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 400 mOhms

Vgs - Gate-Source Voltage:: 30 V

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Packaging:: Tube

Height:: 9.15 mm

Length:: 10.4 mm

Series:: STP11NM80

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 4.6 mm

Brand:: STMicroelectronics

Forward Transconductance - Min:: 8 S

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 17 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 46 ns

Typical Turn-On Delay Time:: 22 ns

Unit Weight:: 0.050717 oz

Tags: STP11NM8, STP11NM, STP11N, STP11, STP1, STP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP11NM80 Description

***icroelectronics: N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220

***ical: Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): MOSFET N-Channel 800V 11A MDMESH TO220

***ark: MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package

***ure Electronics: N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh II MosFet - TO-220

***ical: Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 14 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***ark: Mosfet Transistor, N Channel, 13 A, 600 V, 550 Mohm, 10 V, 3.75 V Rohs Compliant: Yes

***icroelectronics: N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET

***th Star Micro: Transistor MOSFET N-CH 600V 13A 3-Pin (3+Tab) TO-220 Tube

***ure Electronics: STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3

***ponent Stockers USA: 13 A 600 V 0.55 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220

***roFlash: Mosfet Transistor, N Channel, 12 A, 650 V, 0.23 Ohm, 10 V, 4 V Rohs Compliant: Yes

***ical: Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220

***r Electronics: Power Field-Effect Transistor, 14A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 800V, 14A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; P

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220

***ure Electronics: Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220

***Yang: Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

STP11NM80 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STP11NM80 DISTI # 497-4369-5-ND	STMicroelectronics	MOSFET N-CH 800V 11A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2500:$2.9327 500:$3.6603 100:$4.2998 50:$4.9612 10:$5.2480 1:$5.8400
STP11NM80 DISTI # V99:2348_18460714	STMicroelectronics	Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STP11NM80 DISTI # STP11NM80	STMicroelectronics	Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM80) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7400 500:€1.7800 250:€1.9500 100:€2.0600 10:€2.1700 1:€4.7100
STP11NM80 DISTI # STP11NM80	STMicroelectronics	Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM80) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.5900 6000:$2.6900 4000:$2.7900 2000:$2.9900 1000:$3.0900
STP11NM80 DISTI # 57P1858	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$2.7300 250:$2.8200 100:$3.3600 50:$3.8900 25:$4.1400 10:$4.7300 1:$5.4600
STP11NM80 DISTI # 511-STP11NM80	STMicroelectronics	MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS: Compliant	0	1:$5.5500 10:$4.7200 100:$4.0900 250:$3.8800 500:$3.4800 1000:$2.9400 2000:$2.7900
STP11NM80 DISTI # 6875235	STMicroelectronics	MOSFET N-CHANNEL 800V 11A MDMESH TO220, EA	38	500:£2.6200 150:£3.0700 50:£3.3000 10:£3.5600 1:£4.4700
STP11NM80 DISTI # 6875235P	STMicroelectronics	MOSFET N-CHANNEL 800V 11A MDMESH TO220, TU	142	500:£2.6200 150:£3.0700 50:£3.3000 10:£3.5600
STP11NM80 DISTI # STP11NM80	STMicroelectronics	Transistor: N-MOSFET,unipolar,800V,11A,150W,TO220-3	3	100:$2.0900 25:$2.2800 10:$2.6400 3:$3.2200 1:$3.6100
STP11NM80 DISTI # TMOSP7703	STMicroelectronics	N-CH 800V11A400mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.5600
STP11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO-220	20	1:$1.7500 100:$1.6100 500:$1.4900 1000:$1.4000
STP11NM80 DISTI # 9512730	STMicroelectronics	MOSFET, N, TO-220	180	500:£2.6600 250:£2.9600 100:£3.1200 10:£3.6000 1:£4.7000
STP11NM80 DISTI # 9512730	STMicroelectronics	MOSFET, N, TO-220 RoHS: Compliant	980	2000:$4.2000 1000:$4.4300 500:$5.2400 250:$5.8500 100:$6.1600 10:$7.1100 1:$8.3600

Image	Part #	Description
	Mfr.#: STRVS185X02B OMO.#: OMO-STRVS185X02B	TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
	Mfr.#: STRVS280X02F OMO.#: OMO-STRVS280X02F	TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
	Mfr.#: STRVS185X02B OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS	TVS DIODE 128V 185V SMB
	Mfr.#: STRVS280X02F OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS	TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A

STP11NM80

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes