IKZ75N65ES5XKSA1

Mfr. #:: IKZ75N65ES5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT TRENCH 650V 80A TO247-4
Lifecycle:: New from this manufacturer.
Datasheet:: IKZ75N65ES5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IKZ75N65ES5XKSA1 more Information

Product Attribute
Attribute Value

Tags: IKZ75N65E, IKZ7, IKZ

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IKZ75N65ES5XKSA1 Description

***Components: In a Tube of 30, Infineon IKZ75N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247

***ical: Trans IGBT Chip N-CH 650V 80A 395000mW 4-Pin(4+Tab) TO-247 Tube

***i-Key: IGBT TRENCH 650V 80A TO247-4

***ronik: IGBT 650V 75A 1,42V TO247-4

***et Europe: IGBT PRODUCTS

***ark: Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: TRANSISTOR, IGBT, CA-N, 650V, 80A, TO247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.42V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Very low control inductance loop; Extra emitter pin, the forth package pin, for driver feedback; Same creepage distance of collector emitter as standard TO-247 package | Benefits: Over 20% total switching loses reduction compared to standard TO-247-3; System efficiency improvement or power density increase compared to standard TO-247-3 | Target Applications: Industrial UPS; Industrial SMPS; Energy Storage; Charger; Welding

IKZ75N65ES5XKSA1 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs: Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.

Market price

Part #	Mfg.	Description	Stock	Price
IKZ75N65ES5XKSA1 DISTI # V36:1790_18195630	Infineon Technologies AG	IKZ75N65ES5XKSA1	0	240000:$3.9170 120000:$3.9220 24000:$4.7390 2400:$6.4650 240:$6.7700
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 80A TO247-4 RoHS: Compliant Min Qty: 1 Container: Tube	220In Stock	720:$5.4726 240:$6.2847 25:$7.2380 10:$7.5910 1:$8.4000
IKZ75N65ES5XKSA1 DISTI # SP001602592	Infineon Technologies AG	IGBT PRODUCTS (Alt: SP001602592) RoHS: Compliant Min Qty: 1	Europe - 240	1000:€3.6900 500:€3.7900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.5900 1:€5.6900
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5XKSA1	Infineon Technologies AG	IGBT PRODUCTS - Rail/Tube (Alt: IKZ75N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.1900 1440:$4.2900 960:$4.4900 480:$4.5900 240:$4.7900
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5	Infineon Technologies AG	IGBT PRODUCTS (Alt: IKZ75N65ES5) RoHS: Compliant Min Qty: 240	Asia - 0	12000:$4.2565 6000:$4.3110 2400:$4.3670 1200:$4.4245 720:$4.5441 480:$4.6703 240:$4.8037
IKZ75N65ES5XKSA1 DISTI # 24AC9033	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.42V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes	21	500:$5.2600 250:$5.7700 100:$6.0400 50:$6.5000 25:$6.9600 10:$7.3000 1:$8.0700
IKZ75N65ES5XKSA1 DISTI # 726-IKZ75N65ES5XKSA1	Infineon Technologies AG	IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l RoHS: Compliant	192	1:$7.9900 10:$7.2300 25:$6.8900 100:$5.9800 250:$5.7100 500:$5.2100
IKZ75N65ES5XKSA1 DISTI # 2771419	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247	71	100:£4.3300 50:£4.6700 10:£5.0000 5:£5.4000 1:£5.8000
IKZ75N65ES5XKSA1 DISTI # XSKDRABV0021139	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$5.5500 240:$5.9500
IKZ75N65ES5XKSA1 DISTI # 2771419	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247 RoHS: Compliant	21	720:$8.2500 240:$9.4800 25:$10.9100 10:$11.4400 1:$12.6600

Related products

Image	Part #	Description
	Mfr.#: IKZ75N65ES5XKSA1 OMO.#: OMO-IKZ75N65ES5XKSA1	IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-2
	Mfr.#: IKZ75N65EL5XKSA1 OMO.#: OMO-IKZ75N65EL5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65EH5XKSA1 OMO.#: OMO-IKZ75N65EH5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65NH5XKSA1 OMO.#: OMO-IKZ75N65NH5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65EH5 OMO.#: OMO-IKZ75N65EH5-1190	Trans IGBT Chip N-CH 650V 90A 4-Pin(4+Tab) TO-247
	Mfr.#: IKZ75N65EH5 K75EEH5 OMO.#: OMO-IKZ75N65EH5-K75EEH5-1190	New and Original
	Mfr.#: IKZ75N65EH5XKSA1 OMO.#: OMO-IKZ75N65EH5XKSA1-INFINEON-TECHNOLOGIES	IGBT 650V 90A W/DIO TO247-4
	Mfr.#: IKZ75N65EL5 OMO.#: OMO-IKZ75N65EL5-1190	650V,100A,IGBT with Anti-Parallel Diode
	Mfr.#: IKZ75N65ES5XKSA1 OMO.#: OMO-IKZ75N65ES5XKSA1-INFINEON-TECHNOLOGIES	IGBT TRENCH 650V 80A TO247-4
	Mfr.#: IKZ75N65NH5 K75ENH5 OMO.#: OMO-IKZ75N65NH5-K75ENH5-1190	New and Original

Availability

Stock:: Available
On Order:: 2500
Enter Quantity:

Current price of IKZ75N65ES5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.88~~; ~~$5.88~~

10: ~~$5.58~~; ~~$55.82~~

100: ~~$5.29~~; ~~$528.80~~

500: ~~$4.99~~; ~~$2 497.10~~

1000: ~~$4.70~~; ~~$4 700.40~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes