SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3
Mfr. #:
SIHJ8N60E-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Datasheet:
SIHJ8N60E-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ8N60E-T1-GE3 DatasheetSIHJ8N60E-T1-GE3 Datasheet (P4-P6)SIHJ8N60E-T1-GE3 Datasheet (P7-P9)SIHJ8N60E-T1-GE3 Datasheet (P10-P11)
ECAD Model:
More Information:
SIHJ8N60E-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8L-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
450 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
29 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 8A 5-Pin(4+Tab) PowerPAK SO T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor
*** Europe
600V N-CHANNEL PPAK SO8L
***et
POWERPAK SO-8L
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
600V/650V E Series PowerPAK SO-8L MOSFETs
Vishay 600V/650V E Series PowerPAK® SO-8L MOSFETs offer increased reliability and reduced package inductance for lighting, industrial, telecom, computing, and consumer applications. Built on Vishay's Superjunction technology, these power MOSFETs feature low maximum ON-resistance down to 0.52Ω at 10V, ultra-low gate charge down to 17nC, and low gate charge times ON-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.Learn More
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHJ8N60E-T1-GE3
DISTI # V36:1790_14140853
Vishay IntertechnologiesTrans MOSFET N-CH 600V 8A0
  • 3000000:$0.9667
  • 1500000:$0.9673
  • 300000:$0.9836
  • 30000:$1.0020
  • 3000:$1.0050
SIHJ8N60E-T1-GE3
DISTI # SIHJ8N60E-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 600V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
950In Stock
  • 1000:$1.1118
  • 500:$1.3419
  • 100:$1.6332
  • 10:$2.0320
  • 1:$2.2600
SIHJ8N60E-T1-GE3
DISTI # SIHJ8N60E-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 600V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
950In Stock
  • 1000:$1.1118
  • 500:$1.3419
  • 100:$1.6332
  • 10:$2.0320
  • 1:$2.2600
SIHJ8N60E-T1-GE3
DISTI # SIHJ8N60E-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 600V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.9678
  • 3000:$1.0050
SIHJ8N60E-T1-GE3
DISTI # SIHJ8N60E-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ8N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 30000:$0.9079
  • 18000:$0.9339
  • 12000:$0.9599
  • 6000:$1.0009
  • 3000:$1.0319
SIHJ8N60E-T1-GE3
DISTI # SIHJ8N60E-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R (Alt: SIHJ8N60E-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.9059
  • 18000:€0.9579
  • 12000:€1.0789
  • 6000:€1.3079
  • 3000:€1.8679
SIHJ8N60E-T1-GE3
DISTI # 76Y1446
Vishay IntertechnologiesPOWERPAK SO-8L0
  • 10000:$0.8870
  • 6000:$0.9220
  • 4000:$0.9580
  • 2000:$1.0700
  • 1000:$1.1200
  • 1:$1.2000
SIHJ8N60E-T1-GE3
DISTI # 01AC4967
Vishay IntertechnologiesMOSFET, N-CH, 600V, 8A, POWERPAKSO,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.45ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes2912
  • 500:$1.3500
  • 250:$1.4300
  • 100:$1.5100
  • 50:$1.6400
  • 25:$1.7600
  • 10:$1.8900
  • 1:$2.2500
SIHJ8N60E-T1-GE3
DISTI # 78-SIHJ8N60E-T1-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant
2874
  • 1:$2.2000
  • 10:$1.8300
  • 100:$1.4100
  • 500:$1.2400
SIHJ8N60ET1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant
3000
    SIHJ8N60E-T1-GE3
    DISTI # 2630944
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 8A, POWERPAKSO
    RoHS: Compliant
    2912
    • 3000:$1.8400
    • 500:$1.8700
    • 100:$2.1200
    • 10:$2.7600
    • 1:$3.3200
    SIHJ8N60E-T1-GE3
    DISTI # 2630944
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 8A, POWERPAKSO2915
    • 500:£0.8500
    • 250:£0.9090
    • 100:£0.9630
    • 10:£1.2700
    • 1:£1.7100
    SIHJ8N60E-T1-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK SO-8L
    RoHS: Compliant
    Americas -
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      NLSX5014MUTAG

      Mfr.#: NLSX5014MUTAG

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      Translation - Voltage Levels 4 BIT 140 MBPS TRNSLATOR
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      Mfr.#: RC0603JR-07330RL

      OMO.#: OMO-RC0603JR-07330RL

      Thick Film Resistors - SMD 330 OHM 5%
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      Mfr.#: RC0603FR-0726K1L

      OMO.#: OMO-RC0603FR-0726K1L

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      Mfr.#: RC0402FR-07200RP

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      Mfr.#: RC0402FR-075KL

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      PRTR5V0U2X,215

      Mfr.#: PRTR5V0U2X,215

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      TVS DIODE 5.5V SOT143B
      12065A222FAT4A

      Mfr.#: 12065A222FAT4A

      OMO.#: OMO-12065A222FAT4A-AVX

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 2200pF 1% C0G 1206 SIZE
      AC0603JR-07100RL

      Mfr.#: AC0603JR-07100RL

      OMO.#: OMO-AC0603JR-07100RL-YAGEO

      Thick Film Resistors - SMD 1/10W 100ohm 5%
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      Mfr.#: NLSX5014MUTAG

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      Translation - Voltage Levels 4 BIT 140 MBPS TRNSLATOR
      Availability
      Stock:
      Available
      On Order:
      1985
      Enter Quantity:
      Current price of SIHJ8N60E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.20
      $2.20
      10
      $1.83
      $18.30
      100
      $1.41
      $141.00
      500
      $1.24
      $620.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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