IPD65R950CFDATMA2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

3.9 A

Rds On - Drain-Source Resistance:

950 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

14.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

36.7 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Reel

Series:

CFD2

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Fall Time:

13.8 ns

Product Type:

MOSFET

Rise Time:

6.5 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

IPD65R950CFD

Tags

IPD65R950CF, IPD65R950C, IPD65R9, IPD65R, IPD65, IPD6, IPD