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SQJA38EP-T1_GE3

SQJA38EP-T1_GE3
Mfr. #:
SQJA38EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
SQJA38EP-T1_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SQJA38EP-T1_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8L-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
6.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
68 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerPAK
Packaging:
Reel
Series:
SQ
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
51 S
Fall Time:
57 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
14 ns
Tags
SQJA3, SQJA, SQJ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Image Part # Description
SQJA38EP-T1_GE3

Mfr.#: SQJA38EP-T1_GE3

OMO.#: OMO-SQJA38EP-T1-GE3

 MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of SQJA38EP-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.96
$0.96
10
$0.79
$7.94
100
$0.61
$60.90
500
$0.52
$262.00
1000
$0.41
$413.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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