SI3851DV-T1-GE3

Mfr. #:: SI3851DV-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI3851DV-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI3851DV-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: IC Chips

Packaging: Reel

Part-Aliases: SI3851DV-GE3

Unit-Weight: 0.000705 oz

Mounting-Style: SMD/SMT

Package-Case: TSOP-6

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single with Schottky Diode

Transistor-Type: 1 P-Channel

Pd-Power-Dissipation: 830 mW

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 1.6 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistance: 200 mOhms

Transistor-Polarity: P-Channel

Tags: SI3851DV-T, SI3851, SI385, SI38, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
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SI3851DV-T1-GE3 Description

***et: P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE

***ment14 APAC: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V

***ark: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes

SI3851DV-T1-GE3 More Information

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI3851DV-T1-GE3 DISTI # SI3851DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3629 6000:$0.3529 12000:$0.3379 18000:$0.3289 30000:$0.3199
SI3851DV-T1-GE3 DISTI # 781-SI3851DV-GE3	Vishay Intertechnologies	MOSFET 30V 1.8A 1.15W 200mohm @ 10V RoHS: Compliant	0	3000:$0.3500 6000:$0.3330 9000:$0.3210 24000:$0.3100

Related products

Image	Part #	Description
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3	MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3	MOSFET 30V 1.8A 1.15W
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV OMO.#: OMO-SI3851DV-1190	New and Original
	Mfr.#: SI3851DV-T1 OMO.#: OMO-SI3851DV-T1-1190	New and Original
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3-VISHAY	MOSFET P-CH 30V 1.6A 6-TSOP
	Mfr.#: SI3851DV-T1-ES OMO.#: OMO-SI3851DV-T1-ES-1190	New and Original

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SI3851DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.46~~; ~~$0.46~~

10: ~~$0.44~~; ~~$4.42~~

100: ~~$0.42~~; ~~$41.85~~

500: ~~$0.40~~; ~~$197.65~~

1000: ~~$0.37~~; ~~$372.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI3851DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes