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SIHG35N60EF-GE3

SIHG35N60EF-GE3
Mfr. #:
SIHG35N60EF-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs TO-247AC
Lifecycle:
New from this manufacturer.
Datasheet:
SIHG35N60EF-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHG35N60EF-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
97 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
134 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
EF
Transistor Type:
1 N-Channel EF-Series Power MOSFET
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
8 S
Fall Time:
61 ns
Product Type:
MOSFET
Rise Time:
85 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
96 ns
Typical Turn-On Delay Time:
28 ns
Tags
SIHG3, SIHG, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Part # Mfg. Description Stock Price
SIHG35N60EF-GE3
DISTI # V99:2348_22712085		Vishay IntertechnologiesEF Series Power MOSFET With Fast Body Diode TO-247AC, 97 m @ 10V995
  • 2500:$3.3250
  • 500:$3.8790
  • 100:$4.5450
  • 25:$5.4070
  • 10:$5.6590
  • 1:$7.4569
SIHG35N60EF-GE3
DISTI # SIHG35N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		530In Stock
  • 2500:$3.4284
  • 500:$4.2791
  • 100:$5.0266
  • 25:$5.8000
  • 10:$6.1350
  • 1:$6.8300
SIHG35N60EF-GE3
DISTI # 33159276		Vishay IntertechnologiesEF Series Power MOSFET With Fast Body Diode TO-247AC, 97 m @ 10V995
  • 2500:$3.3250
  • 500:$3.8790
  • 100:$4.5450
  • 25:$5.4070
  • 10:$5.6590
  • 2:$7.4569
SIHG35N60EF-GE3
DISTI # SIHG35N60EF-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHG35N60EF-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$3.0900
  • 3000:$3.1900
  • 2000:$3.2900
  • 1000:$3.3900
  • 500:$3.4900
SIHG35N60EF-GE3
DISTI # 99AC9560		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes50
  • 2500:$3.2900
  • 1000:$3.4600
  • 500:$4.1100
  • 100:$4.7300
  • 50:$5.0700
  • 25:$5.4100
  • 10:$5.7500
  • 1:$6.9400
SIHG35N60EF-GE3
DISTI # 78-SIHG35N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		532
  • 1:$6.8700
  • 10:$5.6900
  • 100:$4.6800
  • 250:$4.5400
  • 500:$4.0700
  • 1000:$3.4300
SIHG35N60EF-GE3
DISTI # 3019092		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-247AC25
  • 500:£2.9400
  • 250:£3.2900
  • 100:£3.3900
  • 10:£4.1200
  • 1:£5.4600
SIHG35N60EF-GE3
DISTI # 3019092		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-247AC
RoHS: Compliant		50
  • 1000:$4.7100
  • 500:$5.2600
  • 250:$5.7400
  • 100:$6.0300
  • 10:$6.9600
  • 1:$8.9400
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Availability
Stock:
527
On Order:
2510
Enter Quantity:
Current price of SIHG35N60EF-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.87
$6.87
10
$5.69
$56.90
100
$4.68
$468.00
250
$4.54
$1 135.00
500
$4.07
$2 035.00
1000
$3.43
$3 430.00
2500
$3.26
$8 150.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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