SIHD4N80E-GE3

Mfr. #:: SIHD4N80E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD4N80E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHD4N80E-GE3 Datasheet SIHD4N80E-GE3 Datasheet (P4-P6)SIHD4N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIHD4N80E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 4.3 A

Rds On - Drain-Source Resistance:: 1.1 Ohms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 16 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 69 W

Configuration:: Single

Channel Mode:: Enhancement

Series:: E

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 1.5 S

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 7 ns

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 12 ns

Tags: SIHD, SIH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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SIHD4N80E-GE3 Description

***et Japan: Transistor MOSFET N-CH 800V 4.3A 3-Pin TO-252

***nell: MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W.

***ark: Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

SIHD4N80E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD4N80E-GE3 DISTI # SIHD4N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V FP TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	2870In Stock	5000:$0.7781 2500:$0.8080 1000:$0.8678 500:$1.0474 100:$1.2748 10:$1.5860 1:$1.7700
SIHD4N80E-GE3 DISTI # SIHD4N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 4.3A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD4N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.7269 18000:$0.7479 12000:$0.7689 6000:$0.8009 3000:$0.8259
SIHD4N80E-GE3 DISTI # 78AC6519	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	2990	1000:$0.8310 500:$1.0000 100:$1.1400 50:$1.2500 25:$1.3600 10:$1.4700 1:$1.7800
SIHD4N80E-GE3 DISTI # 78-SIHD4N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	2842	1:$1.7600 10:$1.4600 100:$1.1300 500:$0.9930 1000:$0.8230
SIHD4N80E-GE3 DISTI # 2932924	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W	2990	500:£0.7190 250:£0.7690 100:£0.8190 10:£1.1000 1:£1.4500
SIHD4N80E-GE3 DISTI # 2932924	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W RoHS: Compliant	2990	1000:$1.2800 500:$1.3500 250:$1.6000 100:$1.9400 10:$2.4700 1:$2.9900
SIHD4N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	Americas -

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SIHD4N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.76~~; ~~$1.76~~

10: ~~$1.46~~; ~~$14.60~~

100: ~~$1.13~~; ~~$113.00~~

500: ~~$0.99~~; ~~$496.50~~

1000: ~~$0.82~~; ~~$823.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes