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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3
Mfr. #:
SI2312BDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI2312BDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2312BDS-T1-GE3 DatasheetSI2312BDS-T1-GE3 Datasheet (P4-P6)SI2312BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SI2312BDS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
3.9 A
Rds On - Drain-Source Resistance:
31 mOhms
Vgs th - Gate-Source Threshold Voltage:
450 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
7.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
0.75 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.45 mm
Length:
2.9 mm
Series:
SI2
Transistor Type:
1 N-Channel
Width:
1.6 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
30 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
SI2312BDS-GE3
Unit Weight:
0.000282 oz
Tags
SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
***ical
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2312BDS-T1-GE3
DISTI # V72:2272_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 1000:$0.2142
  • 500:$0.2783
  • 250:$0.3181
  • 100:$0.3534
  • 25:$0.4250
  • 10:$0.5194
  • 1:$0.6006
SI2312BDS-T1-GE3
DISTI # V36:1790_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2127
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		159000In Stock
  • 75000:$0.1301
  • 30000:$0.1314
  • 15000:$0.1386
  • 6000:$0.1489
  • 3000:$0.1592
SI2312BDS-T1-GE3
DISTI # 33707813		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1688
SI2312BDS-T1-GE3
DISTI # 32142891		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 35:$0.6006
SI2312BDS-T1-GE3
DISTI # 30601987		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		49
  • 23:$1.1000
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$0.1125
  • 75000:$0.1144
  • 30000:$0.1164
  • 15000:$0.1205
  • 9000:$0.1250
  • 6000:$0.1298
  • 3000:$0.1350
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1919
  • 18000:€0.2059
  • 12000:€0.2239
  • 6000:€0.2599
  • 3000:€0.3809
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1254
  • 18000:$0.1288
  • 12000:$0.1325
  • 6000:$0.1381
  • 3000:$0.1424
SI2312BDS-T1-GE3
DISTI # 16P3709		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes0
  • 1000:$0.2180
  • 500:$0.2820
  • 250:$0.3130
  • 100:$0.3430
  • 50:$0.4030
  • 25:$0.4630
  • 1:$0.6060
SI2312BDS-T1-GE3
DISTI # 29X0523		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3.
DISTI # 16AC0252		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3
DISTI # 781-SI2312BDS-T1-GE3		Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
RoHS: Compliant		8300
  • 1:$0.6100
  • 10:$0.4690
  • 100:$0.3480
  • 500:$0.2860
  • 1000:$0.2210
  • 3000:$0.2010
SI2312BDS-T1-GE3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
RoHS: Compliant		75Cut Tape/Mini-Reel
  • 1:$0.2900
  • 100:$0.1880
  • 250:$0.1720
  • 500:$0.1610
  • 1500:$0.1460
SI2312BDST1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
RoHS: Compliant		45000
    SI2312BDS-T1-GE3Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
    RoHS: Compliant    		Americas - 3000
      SI2312BDS-T1-GE3
      DISTI # C1S803605191265      		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
      RoHS: Compliant      		49
      • 10:$0.4020
      • 1:$0.8800
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      Mfr.#: SMMBT3904LT1G

      OMO.#: OMO-SMMBT3904LT1G-ON-SEMICONDUCTOR

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      Availability
      Stock:
      Available
      On Order:
      1991
      Enter Quantity:
      Current price of SI2312BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.61
      $0.61
      10
      $0.47
      $4.69
      100
      $0.35
      $34.80
      500
      $0.29
      $143.00
      1000
      $0.22
      $221.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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