PartNumber | SI2312BDS-T1-E3 | SI2312BDS | SI2312BDS-T1-E3-CUT TAPE |
Description | MOSFET N-Channel 20V 3.9A | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Rds On Drain Source Resistance | 31 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.25 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Height | 1.45 mm | - | - |
Length | 2.9 mm | - | - |
Series | SI2 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 1.6 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 30 S | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 35 ns | - | - |
Typical Turn On Delay Time | 9 ns | - | - |
Part # Aliases | SI2312BDS-E3 | - | - |
Unit Weight | 0.000282 oz | - | - |