PartNumber | SI2312BDS-T1-E3 | SI2312-TP | SI2312A-TP |
Description | MOSFET N-Channel 20V 3.9A | MOSFET N-Channel MOSFET, SOT-23 package | MOSFET N-Ch Enh FET 20Vds 5.0A 8Vgs 0.35W |
Manufacturer | Vishay | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 5 A | 5 A | 5 A |
Rds On Drain Source Resistance | 31 mOhms | 31.8 mOhms | 25 mOhms |
Vgs th Gate Source Threshold Voltage | 450 mV | 450 mV | 0.5 V |
Vgs Gate Source Voltage | 4.5 V | 8 V | 4.5 V |
Qg Gate Charge | 12 nC | - | 4 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.25 W | 350 mW | 0.35 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | Reel |
Height | 1.45 mm | - | - |
Length | 2.9 mm | - | - |
Series | SI2 | TrenchFET | N-Ch Polarity |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N- Channel |
Width | 1.6 mm | - | - |
Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
Forward Transconductance Min | 30 S | 6 S | 6 S |
Fall Time | 10 ns | 12 ns | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | 20 ns | 20 ns |
Factory Pack Quantity | 3000 | 3000 | 30000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | - | 32 ns |
Typical Turn On Delay Time | 9 ns | - | 10 ns |
Part # Aliases | SI2312BDS-E3 | - | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |