SI2312BDS-T1-GE3

Mfr. #:: SI2312BDS-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 20V 3.9A SOT23-3
Lifecycle:: New from this manufacturer.
Datasheet:: SI2312BDS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI2312BDS-T1-GE3 more Information

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Tags: SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2

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SI2312BDS-T1-GE3 Description

***ure Electronics: Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

***ical: Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Msl:- Rohs Compliant: No

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

SI2312BDS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2312BDS-T1-GE3 DISTI # V72:2272_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1161	1000:$0.2142 500:$0.2783 250:$0.3181 100:$0.3534 25:$0.4250 10:$0.5194 1:$0.6006
SI2312BDS-T1-GE3 DISTI # V36:1790_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.2127
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	160229In Stock	1000:$0.1798 500:$0.2327 100:$0.2961 10:$0.3970 1:$0.4600
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	160229In Stock	1000:$0.1798 500:$0.2327 100:$0.2961 10:$0.3970 1:$0.4600
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	159000In Stock	75000:$0.1301 30000:$0.1314 15000:$0.1386 6000:$0.1489 3000:$0.1592
SI2312BDS-T1-GE3 DISTI # 33707813	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000:$0.1688
SI2312BDS-T1-GE3 DISTI # 32142891	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1161	35:$0.6006
SI2312BDS-T1-GE3 DISTI # 30601987	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	49	23:$1.1000
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	150000:$0.1125 75000:$0.1144 30000:$0.1164 15000:$0.1205 9000:$0.1250 6000:$0.1298 3000:$0.1350
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1919 18000:€0.2059 12000:€0.2239 6000:€0.2599 3000:€0.3809
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1254 18000:$0.1288 12000:$0.1325 6000:$0.1381 3000:$0.1424
SI2312BDS-T1-GE3 DISTI # 16P3709	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes	0	1000:$0.2180 500:$0.2820 250:$0.3130 100:$0.3430 50:$0.4030 25:$0.4630 1:$0.6060
SI2312BDS-T1-GE3 DISTI # 29X0523	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes	0	50000:$0.1680 30000:$0.1760 20000:$0.1890 10000:$0.2020 5000:$0.2190 1:$0.2240
SI2312BDS-T1-GE3. DISTI # 16AC0252	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No	0	50000:$0.1680 30000:$0.1760 20000:$0.1890 10000:$0.2020 5000:$0.2190 1:$0.2240
SI2312BDS-T1-GE3 DISTI # 781-SI2312BDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	8300	1:$0.6100 10:$0.4690 100:$0.3480 500:$0.2860 1000:$0.2210 3000:$0.2010
SI2312BDS-T1-GE3	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant	75Cut Tape/Mini-Reel	1:$0.2900 100:$0.1880 250:$0.1720 500:$0.1610 1500:$0.1460
SI2312BDST1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant	45000
SI2312BDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	Americas - 3000
SI2312BDS-T1-GE3 DISTI # C1S803605191265	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	49	10:$0.4020 1:$0.8800

Image	Part #	Description
	Mfr.#: SI2312BDS-T1-E3 OMO.#: OMO-SI2312BDS-T1-E3	MOSFET N-Channel 20V 3.9A
	Mfr.#: SI2312BDS-T1-GE3 OMO.#: OMO-SI2312BDS-T1-GE3	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
	Mfr.#: SI2312BD OMO.#: OMO-SI2312BD-1190	New and Original
	Mfr.#: SI2312BDS OMO.#: OMO-SI2312BDS-1190	New and Original
	Mfr.#: SI2312BDS-T1-E3 OMO.#: OMO-SI2312BDS-T1-E3-VISHAY	MOSFET N-CH 20V 3.9A SOT23-3
	Mfr.#: SI2312BDS-T1-GE3 OMO.#: OMO-SI2312BDS-T1-GE3-VISHAY	MOSFET N-CH 20V 3.9A SOT23-3
	Mfr.#: SI2312BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2312BDS-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI2312BDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2312BDS-T1-GE3-CUT-TAPE-1190	New and Original

SI2312BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes