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| PartNumber | SI2312BDS-T1-E3 | SI2312BDS-T1-GE3 |
| Description | MOSFET N-Channel 20V 3.9A | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 5 A | 3.9 A |
| Rds On Drain Source Resistance | 31 mOhms | 31 mOhms |
| Vgs th Gate Source Threshold Voltage | 450 mV | 450 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V |
| Qg Gate Charge | 12 nC | 7.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.25 W | 0.75 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.45 mm | 1.45 mm |
| Length | 2.9 mm | 2.9 mm |
| Series | SI2 | SI2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 1.6 mm | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 30 S | 30 S |
| Fall Time | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 30 ns | 30 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 35 ns |
| Typical Turn On Delay Time | 9 ns | 9 ns |
| Part # Aliases | SI2312BDS-E3 | SI2312BDS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2312BDS-T1-E3 | MOSFET N-Channel 20V 3.9A | |
| SI2312BDS-T1-GE3 | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V | ||
Vishay |
SI2312BDS-T1-E3 | MOSFET N-CH 20V 3.9A SOT23-3 | |
| SI2312BDS-T1-GE3 | MOSFET N-CH 20V 3.9A SOT23-3 | ||
| SI2312BDS-T1-E3-CUT TAPE | New and Original | ||
| SI2312BDS-T1-GE3-CUT TAPE | New and Original |