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Part # | Mfg. | Description | Stock | Price |
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SI2312BDS-T1-GE3 DISTI # V72:2272_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 1161 |
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SI2312BDS-T1-GE3 DISTI # V36:1790_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 | |
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 164421In Stock |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 164421In Stock |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 162000In Stock |
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SI2312BDS-T1-GE3 DISTI # 33707813 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 3000 |
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SI2312BDS-T1-GE3 DISTI # 32142891 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 1161 |
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SI2312BDS-T1-GE3 DISTI # 30601987 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 49 |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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SI2312BDS-T1-GE3 DISTI # 16P3709 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes | 0 |
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SI2312BDS-T1-GE3 DISTI # 29X0523 | Vishay Intertechnologies | MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes | 0 |
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SI2312BDS-T1-GE3. DISTI # 16AC0252 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No | 0 |
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SI2312BDS-T1-GE3 DISTI # 781-SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | 9187 |
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SI2312BDS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant | 75Cut Tape/Mini-Reel |
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SI2312BDS-T1-GE3 | Vishay Intertechnologies | 6000 | ||
SI2312BDST1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | 45000 | |
SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | Americas - 3000 | |
SI2312BDS-T1-GE3 DISTI # XSFP00000063435 | Vishay Siliconix | RoHS: Compliant | 6000 in Stock0 on Order |
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Image | Part # | Description |
---|---|---|
Mfr.#: SI2312BDS-T1-E3 OMO.#: OMO-SI2312BDS-T1-E3 |
MOSFET N-Channel 20V 3.9A | |
Mfr.#: SI2312BDS-T1-GE3 OMO.#: OMO-SI2312BDS-T1-GE3 |
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V | |
Mfr.#: SI2312BDS-T1-E3 OMO.#: OMO-SI2312BDS-T1-E3-VISHAY |
MOSFET N-CH 20V 3.9A SOT23-3 | |
Mfr.#: SI2312BDS-T1-GE3 OMO.#: OMO-SI2312BDS-T1-GE3-VISHAY |
MOSFET N-CH 20V 3.9A SOT23-3 | |
Mfr.#: SI2312BDS-T1-E3-CUT TAPE |
New and Original | |
Mfr.#: SI2312BDS-T1-GE3-CUT TAPE |
New and Original |