 |  | | |
| PartNumber | SI2312BDS-T1-E3 | SI2312BD | SI2312BDS |
| Description | MOSFET N-Channel 20V 3.9A | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 31 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SI2312BDS-E3 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2312BDS-T1-E3 | MOSFET N-Channel 20V 3.9A | |
| SI2312BDS-T1-GE3 | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V | ||
| SI2312BD | New and Original | ||
| SI2312BDS | New and Original | ||
| SI2312BDS-T1-E3-CUT TAPE | New and Original | ||
| SI2312BDS-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI2312BDS-T1-E3 | MOSFET N-CH 20V 3.9A SOT23-3 | |
| SI2312BDS-T1-GE3 | MOSFET N-CH 20V 3.9A SOT23-3 |