SI3435DV-T1-E3

SI3435DV-T1-E3
Mfr. #:
SI3435DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
RF Bipolar Transistors MOSFET 12V 4.8A 2W
Lifecycle:
New from this manufacturer.
Datasheet:
SI3435DV-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SI3435DV-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
IC Chips
Packaging
Reel
Part-Aliases
SI3435DV-T1
Unit-Weight
0.000705 oz
Mounting-Style
SMD/SMT
Tradename
TrenchFET
Package-Case
TSOP-6
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
1.1 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
45 ns
Rise-Time
45 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuous-Drain-Current
4.8 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Resistance
73 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
90 ns
Typical-Turn-On-Delay-Time
18 ns
Channel-Mode
Enhancement
Tags
SI3435, SI343, SI34, SI3
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
P-Channel MOSFETs 12V 4.8A 2W
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI3435DV-T1-E3
DISTI # 781-SI3435DV-E3
Vishay IntertechnologiesMOSFET 12V 4.8A 2W
RoHS: Compliant
0
  • 3000:$0.3410
  • 6000:$0.3180
  • 9000:$0.3060
  • 24000:$0.2940
Image Part # Description
SI3435DV-T1-GE3

Mfr.#: SI3435DV-T1-GE3

OMO.#: OMO-SI3435DV-T1-GE3

MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
SI3435DV-T1-E3

Mfr.#: SI3435DV-T1-E3

OMO.#: OMO-SI3435DV-T1-E3

MOSFET 12V 4.8A 2W
SI3435DV-T1

Mfr.#: SI3435DV-T1

OMO.#: OMO-SI3435DV-T1-1190

4800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
SI3435DV-T1-GE3

Mfr.#: SI3435DV-T1-GE3

OMO.#: OMO-SI3435DV-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
SI3435DV-T1-E3

Mfr.#: SI3435DV-T1-E3

OMO.#: OMO-SI3435DV-T1-E3-317

RF Bipolar Transistors MOSFET 12V 4.8A 2W
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of SI3435DV-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.44
$0.44
10
$0.42
$4.19
100
$0.40
$39.69
500
$0.37
$187.45
1000
$0.35
$352.80
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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