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Rev. A | Apr. 2012
IS42/45SM/RM/VM16800G
Table7A: 3.3V Absolute Maximum Rating
Parameter Symbol Rating Unit
Ambient Temperature (Industrial)
T
A
-40 ~ 85
°C
Ambient Temperature (Commercial) 0 ~ 70
Storage Temperature T
STG
-55 ~ 150 °C
Voltage on Any Pin relative to VSS V
IN
, V
OUT
-1.0 ~ 4.6 V
Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V
Short Circuit Output Current I
OS
50 mA
Power Dissipation P
D
1 W
Note :
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table8A: 3.3V Capacitance (T
A
=25 °C, f=1MHz, VDD= 3.3V)
Parameter Pin Symbol Min Max Unit
Input Capacitance
CLK C
I1
2 4 pF
A0~A11, BA0~BA1, CKE, /CS, /RAS,
/CAS, /WE, LDQM, UDQM
C
I2
2 4 pF
Data Input/Output Capacitance DQ0~DQ15 C
IO
3 5 pF
Table9A: 3.3V DC Operating Condition (Voltage referenced to VSS=0V, T
A
= -40 ~ 85 °C)
Note :
1. VDDQ must not exceed the level of VDD
2. VIH(max) = 5.3V AC. The overshoot voltage duration is 3ns.
3. VIL(min) = -2.0V AC. The overshoot voltage duration is 3ns.
4. Any input 0V VIN VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. DOUT is disabled, 0V VOUT VDDQ.
Parameter Symbol Min Typ Max Unit Note
Power Supply Voltage
VDD
2.7 3.3 3.6 V
VDDQ 2.7 3.3 3.6 V 1
Input High Voltage V
IH
2.2 - VDDQ+0.3 V 2
Input Low Voltage V
IL
-0.3 0 0.5 V 3
Output High Voltage V
OH
2.4 - - V I
OH
= -0.1mA
Output Low Voltage V
OL
- - 0.4 V I
OL
= +0.1mA
Input Leakage Current I
LI
-1 - 1 uA 4
Output Leakage Current I
LO
-1.5 1.5 uA 5
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IS42/45SM/RM/VM16800G
Table10A: 3.3V AC Operating Condition (T
A
= -40 ~ 85 °C, VDD = 2.7V-3.6V, VSS=0V)
Parameter Symbol Typ Unit
AC Input High/Low Level Voltage V
IH
/ V
IL
2.4 / 0.4 V
Input Timing Measurement Reference Level Voltage V
TRIP
0.5 x VDDQ V
Input Rise / Fall Time t
R
/ t
F
1 / 1 ns
Output Timing Measurement Reference Level Voltage V
OUTREF
0.5 x VDDQ V
Output Load Capacitance for Access Time Measurement C
L
30 pF
Output
870
1200
VDDQ
30pF
Output
30pF
50
VTT=0.5 x VDDQ
Z0=50
DC Output Load Circuit AC Output Load Circuit
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Rev. A | Apr. 2012
IS42/45SM/RM/VM16800G
Table11A: 3.3V DC Characteristic (DC operating conditions unless otherwise noted)
Note :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Typical value at room temperature.
Parameter Sym Test Condition
Speed
Unit Note
-6 -75
Operating Current IDD1
Burst Length=1, One Bank Active,
tRC tRC(min) IOL = 0 mA
50 45 mA 1
Precharge Standby Current
in Power Down Mode
IDD2P CKE VIL(max), tCK = 10ns 0.3
mA
IDD2PS CKE & CLK VIL(max), tCK = 0.3
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE VIH(min), /CS VIH(min), tCK = 10ns
Input signals are changed one time during 2
clks.
10
mA
IDD2NS
CKE VIH(min), CLK VIL(max), tCK =
Input signals are stable.
4
Active Standby Current
in Power Down Mode
IDD3P CKE VIL(max), tCK = 10ns 5
mA
IDD3PS CKE & CLK VIL(max), tCK = 1
Active Standby Current
in Non Power Down Mode
IDD3N
CKE VIH(min), /CS VIH(min), tCK = 10ns
Input signals are changed one time during 2
clks.
20
mA
IDD3NS
CKE VIH(min), CLK VIL(max), tCK =
Input signals are stable.
10
Burst Mode Operating Current IDD4
tCK>tCK(min), IOL = 0 mA, Page Burst
All Banks Activated, tCCD = 1 clk
60 55 mA 1
Auto Refresh Current (4K Cycle) IDD5 tRC tRFC(min), All Banks Active 105 100 mA 2
Self
Refresh
Current
PASR TCSR
IDD6 CKE 0.2V uA
4 banks
85°C 300
45°C 200
2 Bank
85°C 260
45°C 190
1 Bank
85°C 240
45°C 170
Deep Power Down Mode Current IDD7 10 uA 3

IS42RM16800G-75BLI-TR

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DRAM 128M (8Mx16) 133MHz Mobile SDRAM, 2.5v
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