AD7829-1
Rev. 0 | Page 3 of 20
SPECIFICATIONS
V
DD
= 3 V ± 10%, V
DD
= 5 V ± 10%, GND = 0 V, V
REF IN/OUT
= 2.5 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
Parameter Version B Unit Test Conditions/Comments
DYNAMIC PERFORMANCE f
IN
= 30 kHz, f
SAMPLE
= 2 MHz
Signal to (Noise + Distortion) Ratio
1
48 dB min
Total Harmonic Distortion
1
−55 dB max
Peak Harmonic or Spurious Noise
1
−55 dB max
Intermodulation Distortion
1
fa = 27.3 kHz, fb = 28.3 kHz
2nd Order Terms −65 dB typ
3rd Order Terms −65 dB typ
Channel-to-Channel Isolation
1
−70 dB typ f
IN
= 20 kHz
DC ACCURACY
Resolution 8 Bits
Minimum Resolution for Which
No Missing Codes Are Guaranteed
8 Bits
Integral Nonlinearity (INL)
1
±0.75 LSB max
Differential Nonlinearity (DNL)
1
±0.75 LSB max
Gain Error
1
±2 LSB max
Gain Error Match
1
±0.1 LSB typ
Offset Error
1
±1 LSB max
Offset Error Match
1
±0.1 LSB typ
ANALOG INPUTS
2
See Analog Input section
V
DD
= 5 V ± 10% Input voltage span = 2.5 V
V
IN1
to V
IN8
Input Voltage V
DD
V max
0 V min
V
MID
Input Voltage V
DD
− 1.25 V max Default V
MID
= 1.25 V
1.25 V min
V
DD
= 3 V ± 10% Input voltage span = 2 V
V
IN1
to V
IN8
Input Voltage V
DD
V max
0 V min
V
MID
Input Voltage V
DD
− 1 V max Default V
MID
= 1 V
1 V min
V
IN
Input Leakage Current ±1 µA max
V
IN
Input Capacitance 15 pF max
V
MID
Input Impedance 6 kΩ typ
REFERENCE INPUT
V
REF IN/OUT
Input Voltage Range 2.55 V max 2.5 V + 2%
2.45 V min 2.5 V − 2%
Input Current 1 A typ
100 A max
ON-CHIP REFERENCE Nominal 2.5 V
Reference Error ±50 mV max
Temperature Coefficient 50 ppm/°C typ
LOGIC INPUTS
Input High Voltage, V
INH
2.4 V min V
DD
= 5 V ± 10%
Input Low Voltage, V
INL
0.8 V max V
DD
= 5 V ± 10%
Input High Voltage, V
INH
2 V min V
DD
= 3 V ± 10%
Input Low Voltage, V
INL
0.4 V max V
DD
= 3 V ± 10%
Input Current, I
IN
±1 A max Typically 10 nA, V
IN
= 0 V to V
DD
Input Capacitance, C
IN
10 pF max
AD7829-1
Rev. 0 | Page 4 of 20
Parameter Version B Unit Test Conditions/Comments
LOGIC OUTPUTS
Output High Voltage, V
OH
I
SOURCE
= 200 A
4 V min V
DD
= 5 V ± 10%
2.4 V min V
DD
= 3 V ± 10%
Output Low Voltage, V
OL
I
SINK
= 200 A
0.4 V max V
DD
= 5 V ± 10%
0.2 V max V
DD
= 3 V ± 10%
High Impedance Leakage Current ±1 A max
High Impedance Capacitance 10 pF max
CONVERSION RATE
Track/Hold Acquisition Time 200 ns max See Circuit Description section
Conversion Time 420 ns max
POWER SUPPLY REJECTION
V
DD
± 10% ±1 LSB max
POWER REQUIREMENTS
V
DD
4.5 V min 5 V ± 10%; for specified performance
5.5 V max
V
DD
2.7 V min 3 V ± 10%; for specified performance
3.3 V max
I
DD
Normal Operation 12 mA max 8 mA typically
Power-Down 5 A max Logic inputs = 0 V or V
DD
0.2 A typ
Power Dissipation V
DD
= 3 V
Normal Operation 36 mW max Typically 24 mW
Power-Down
200 kSPS 9.58 mW typ
500 kSPS 23.94 mW typ
1
See the Terminology section of this data sheet.
2
Refer to the Analog Input section for an explanation of the analog input(s).
AD7829-1
Rev. 0 | Page 5 of 20
TIMING CHARACTERISTICS
V
REF IN/OUT
= 2.5 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
Parameter
1, 2
5 V ± 10% 3 V ± 10% Unit Description
t
1
420 420 ns max Conversion time
t
2
20 20 ns min
Minimum CONVST
pulse width
t
3
30 30 ns min
Minimum time between the rising edge of RD
and the next falling edge of convert start
t
4
110 110 ns max
EOC
pulse width
70 70 ns min
t
5
10 10 ns max
RD
rising edge to EOC pulse high
t
6
0 0 ns min
CS
to RD setup time
t
7
0 0 ns min
CS
to RD hold time
t
8
30 30 ns min
Minimum RD
pulse width
t
9
3
10 20 ns max
Data access time after RD
low
t
10
4
5 5 ns min
Bus relinquish time after RD
high
20 20 ns max
t
11
10 10 ns min
Address setup time before the falling edge of RD
t
12
15 15 ns min
Address hold time after the falling edge of RD
t
13
200 200 ns min Minimum time between new channel selection and convert start
t
POWER UP
25 25 μs typ
Power-up time from the rising edge of CONVST
using on-chip reference
t
POWER UP
1 1 μs max
Power-up time from the rising edge of CONVST
using external 2.5 V reference
1
Sample tested to ensure compliance.
2
See Figure 21, Figure 22, and Figure 23.
3
Measured with the load circuit of Figure 2 and defined as the time required for an output to cross 0.8 V or 2.4 V with V
DD
= 5 V ± 10%, and the time required for an
output to cross 0.4 V or 2.0 V with V
DD
= 3 V ± 10%.
4
Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 2. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t
10
, quoted in the timing characteristics is the true bus relinquish time
of the part and, as such, is independent of external bus loading capacitances.
TIMING DIAGRAM
200µA I
OL
200µA I
OH
2.1V
TO OUTPUT
PIN
C
L
50pF
06179-002
Figure 2. Load Circuit for Access Time and Bus Relinquish Time

AD7829BRWZ-1RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog to Digital Converters - ADC 3V/5V 2MSPS 8-Bit 1-/4-/8-Ch Sampling
Lifecycle:
New from this manufacturer.
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