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FT25H04S-RT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P32
Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page19
7.12. Read Identification (RDID) (9FH)
The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed
by two bytes of device identification. The device identification indicates the memory type in the first byte, and
the memory capacity of the device in the second byte. Any Read Identification (RDID) command while an
Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted in.
This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data
Output, each bit being shifted out during the falling edge of Serial Clock. The command sequence is shown in
Figure12. The Read Identification (RDID) command is terminated by driving CS# to high at any time during
data output. After CS# is driven high, the device returns to Standby Mode and awaits for new command.
Figure12. Read Identification ID Sequence Diagram
CS#
SCLK
SI
SO
0123456789
9FH
Command
10 11
1512 13 14
High-Z
3936 37 383516 17 34
4744 45 464340 41 42 5552 53 545148 49 50
CS#
SCLK
SI
SO
MSB
Capacity
JDID7-JDID0
7654321 0
Manufacturer ID
7654321 0
MSB
76543210
MSB
MSB
76543210
Manufacturer ID
5552 53 545148 49 50
76543210
Memory Type
JDID15-JDID8
Memory Type
JDID15-JDID8
Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page20
8. ELECTRICAL CHARACTERISTICS
8.1. Power-on Timing
Device is fully
accessible
Read command
is allowed
tVSL
Time
Reset
State
Chip Selection is not allowed
Program,Erase and Write command are ignored
VWI
Vcc(min)
Vcc(max)
tPUW
Table3. Power-Up Timing and Write Inhibit Threshold
Symbol Parameter Min Max Unit
t
VSL
VCC(min) To CS# Low 10 us
t
PUW
Time Delay Before Write Instruction 1 10 ms
V
WI
Write Inhibit Voltage 1 2.5 V
8.2. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The
Status Register contains 00H (all Status Register bits are 0).
8.3. Data Retention and Endurance
Parameter Test Condition Min Unit
150℃
10 Years
Minimum Pattern Data Retention Time
125℃
20 Years
Erase/Program Endurance
-40 to 85℃
100K Cycles
8.4. Latch up Characteristics
Parameter Min Max
Input Voltage Respect To VSS On I/O Pins -1.0V VCC+1.0V
VCC Current -100mA 100mA
Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page21
8.5. Absolute Maximum Ratings
Parameter Value Unit
Ambient Operating Temperature -40 to 85 ℃
Storage Temperature -65 to 150
℃
Output Short Circuit Current 200 mA
Applied Input/Output Voltage -0.5 to 4.0 V
VCC -0.5 to 4.0 V
Input timing reference level
0.8VCC
0.1VCC
0.7VCC
0.2VCC
AC Measurement level 0.5VCC
Output timing reference level
Note:Input pulse rise and fall time are<5ns
8.6. Capacitance Measurement Condition
Symbol Parameter Min Typ Max Unit Conditions
C
IN
Input Capacitance 6 pF VIN=0V
C
OUT
Output Capacitance 8 pF VOUT=0V
C
L
Load Capacitance 30 pF
Input Rise And Fall time 5 ns
Input Pulse Voltage 0.1VCC to 0.8VCC V
Input Timing Reference Voltage 0.2VCC to 0.7VCC V
Output Timing Reference Voltage 0.5VCC V
Figure13. Input Test Waveform and Measurement Level
Maximum Negative Overshoot Waveform
20ns
20ns
20ns
VSS
VSS-2.0V
Maximum Positive Overshoot Waveform
20ns
20ns
20ns
VCC
VCC+2.0V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P32

FT25H04S-RT

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IC FLASH 4M SPI 120MHZ 8SOP
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