Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page22
8.7. DC Characteristics
(T=-40~85,VCC=2.7~3.6V)
Symbol Parameter Test Condition Min. Typ Max. Unit
I
LI
Input Leakage Current ±2 μA
I
LO
Output Leakage Current ±2 μA
I
CC1
Standby Current
CS#=VCC
VIN=VCC or VSS
1 5 μA
CLK=0.1VCC/0.9VCC at
120MHz for Fast Read
15 20 mA
I
CC3
Operating Current(Read)
CLK=0.1VCC/0.9VCC at
40MHz for Read
13 18 mA
I
CC4
Operating Current(PP) CS#=VCC 10 mA
I
CC5
Operating Current(WRSR) CS#=VCC 10 mA
I
CC6
Operating Current(SE) CS#=VCC 10 mA
I
CC7
Operating Current(BE) CS#=VCC 10 mA
V
IL
Input Low Voltage -0.5 0.2VCC V
V
IH
Input High Voltage 0.7VCC VCC+0.4 V
V
OL
Output Low Voltage IOL=1.6mA 0.4 V
V
OH
Output High Voltage IOH=-100uA VCC-0.2 V
Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page23
8.8. AC Characteristics
(T=-40~85,VCC=2.7~3.6VC
L
=30pf)
Symbol Parameter Min. Typ Max. Unit
f
C
Serial Clock Frequency For:Fast Read(0BH), DC 120 MHz
f
R
Serial Clock Frequency For:Read(03H) DC 40 MHz
t
CLH
Serial Clock High Time 4 ns
t
CLL
Serial Clock Low Time 4 ns
t
CLCH
Serial Clock Rise Time(Slew Rate) 0.2 V/ns
t
CHCL
Serial Clock Fall Time(Slew Rate) 0.2 V/ns
t
SLCH
CS# Active Setup Time 5 ns
t
CHSH
CS# Active Hold Time 5 ns
t
SHCH
CS# Not Active Setup Time 5 ns
t
CHSL
CS# Not Active Hold Time 5 ns
t
SHSL
CS# High Time (read/write) 20 ns
t
SHQZ
Output Disable Time 6 ns
t
CLQX
Output Hold Time 1 ns
t
DVCH
Data In Setup Time 2 ns
t
CHDX
Data In Hold Time 2 ns
t
HLCH
Hold# Low Setup Time(relative to Clock) 5 ns
t
HHCH
Hold# High Setup Time(relative to Clock) 5 ns
t
CHHL
Hold# High Hold Time(relative to Clock) 5 ns
t
CHHH
Hold# Low Hold Time(relative to Clock) 5 ns
t
HLQZ
Hold# Low To High-Z Output 6 ns
t
HHQX
Hold# Low To Low-Z Output 6 ns
t
CLQV
Clock Low To Output Valid 6.5 ns
t
WHSL
Write Protect Setup Time Before CS# Low 20 ns
t
SHWL
Write Protect Hold Time After CS# High 100 ns
t
RES2
CS# High To Standby Mode With Electronic
Signature Read
0.1 us
t
W
Write Status Register Cycle Time 50 100 ms
t
PP
Page Programming Time 1.5 2 ms
t
SE
Sector Erase Time 150 300 ms
t
BE
Block Erase Time 0.8 1.5 s
t
CE
Chip Erase Time(FT25H04/02) 6/3 10/5 s
Fremont Micro Devices Preliminary FT25H04/02
© 2014 Fremont Micro Devices Inc. Confidential Rev1.1 DS25H04/02-page24
Figure14. Serial Input Timing
CS#
SO
High-Z
SI
SCLK
LSBMSB
tSHSL
tSHCHtCHSH
tCHCL
tCLCH
tCHSL
tSLCH
tDVCH
tCHDX
Figure15. Output Timing
CS#
SI
Least significant address bit (LIB) in
SO
SCLK
LSB
tCLH
tSHQZ
tCLL
tCLQV
tCLQX
tCLQX
tCLQV

FT25H04S-RT

Mfr. #:
Manufacturer:
Description:
IC FLASH 4M SPI 120MHZ 8SOP
Lifecycle:
New from this manufacturer.
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